Resist of the Month

Resist of the month of October 2019: Medusa 82 UV – excellently suited for grayscale lithography

Medusa 82 UV was already chosen as resist of the month in January 2019. Back then, we highly appreciated the first results for a use as photoresist. Shown are now results with respect to an application in grayscale lithography which were also presented at the MNE 2019 in Greece.
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Resist of the month April 2019: Phoenix 81 – Mix & Match with Thermal Scanning Probe Lithography (t-SPL) and Laser Direct Writing using a NanoFrazor

Allresist developed Phoenix 81 (AR-P 8100) within the scope of a Eurostars project together with SwissLitho AG and other partners. SwissLitho recently added a laser direct writer to the NanoFrazor device (see Fig. 1). It is thus now possible to produce even complicated structures like e.g. single electron transistors (SET) cost-effectively.
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Resist of the Month of October: Medusa 82 – alternative to HSQ

Allresist now developed Medusa 82 as an alternative to HSQ resists. Due to a modification of the polymer, resist Medusa 82 can be handled very easily.
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Resist of the Month July: Medusa 82 – the alternative to HSQ-resists

Our research team successfully developed a negative resist with high resolution and plasma etching stability in oxygen. Already with the first samples, it was possible to achieve the properties of HSQ.
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Resist of the month of April: Fluorescent negative photoresist Atlas 46 S

For the fabrication of optical scales like e.g. in night vision devices, the use of the fascinating possibilities of fluorescence is one option. For this reason we have prompted us to add fluorescent dyes to Atlas 46.
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Resist of the month January: SU 8 alternative – negative photoresist Atlas 46

The outstanding properties of SU-8 are well known to all users of microsystem technologies. Allresists new negative resist Atlas 46 S (solid) can easily be processed with high reproducibility of all properties and with high restistance of resist structures to all commonly used solvents. Atlas 46 S is thus perfectly suitable for all applications in which the layer is intended to remain permanently and resistively on the substrate.
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Resist of the month of October: Fluorescent resist structures with SX AR-P 672.08

Fluorescent structures are needed for optical components and in microscopy. In close collaboration with Precision Optics Gera GmbH we now achieved to add fluorescent dyes to PMMA e-beam resists on anisole basis which subsequently could be structured by electron beam lithography.
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Resist of the month April – Thermally developable positive resist Phoenix 81

These poly(phthalaldehydes) are also suitable for electron beam lithography and for the fabrication of 200 nm thick fibers (electrospinning). The material produced from these threads evaporates immediately upon heating, which offers interesting application possibilities.
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Resist of the month January 2017: Optimised negative spray resist AR-N 2200

Spray resist AR-N 2220 is the only ready-to-use negative resist worldwide. This eliminates the need for the time-consuming and inaccurate mixing of a resist with solvents.
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Resist of the month October 2016: Optimised T-gate structures with three-layer system PMMA, copolymer 617 and CSAR 62

T-gates are required for the manufacture of high-quality transistors. Allresist optimised several three-layer systems for this particular application and designed both universal developers for a single development step, as well as individual developers which are suitable to develop each one of the three layers specifically.
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