Entries by AllAdmin

Extension of the production facilities

On April 29, 2019, Allresist put the new production wing into operation in which from now on 1,000 l resist batch productions and large-scale syntheses will take place with state-of-the-art technology and taking into account all safety considerations.

April 2019: Phoenix 81

Allresist developed Phoenix 81 (AR-P 8100) within the scope of a Eurostars project together with SwissLitho AG and other partners. SwissLitho recently added a laser direct writer to the NanoFrazor device (see Fig. 1)

39th Issue of the AR NEWS

Content:
1. Synthesis week in the new production tract
2. Allresist at the congresses Triple Beam (EIPBN 2019) and MNE 2019
3. Medusa 82 passed comprehensive application tests
3.1. Dissolution test with the sensitive PAG-Medusa 82 (SX AR-N 8250)
3.2. Influence of a PEB on the sensitivity of Medusa 82
3.3. Plasma etching tests with Medusa structures
3.4. Medusa 82 with specifically low contrast
4. Five coloured negative resists on one glass wafer

38th Issue of the AR NEWS

Content:
1. 26 years of Allresist – Inauguration of the new plant on the company anniversary
2. Allresist’s great success with Medusa 82 at the MNE 2018
3. Further Allresist highlights at the MNE
4. Atlas 46 and CAR 44 for e-beam lithography
5. Phoenix 81 – World-wide sales begin!
6. Offspring at Allresist – The next generation!

CAR 44 for e-beam lithography

We now succeeded in finding a remarkable solution for high-layer e-beam structuring. The negative resist CAR 44 (AR-N 4400-10) was coated to yield a layer with a height of 9.5 μm, dried, and irradiated.

Atlas 46 for e-beam lithography

A new application field for Atlas 46 is electron beam lithography, as experiments with a thin Atlas resist layer patterned by e-beam lithography demonstrated. At a layer thickness of 450 nm, 200 nm lines were written into this layer. The sensitivity was 70 μC/cm² at an acceleration voltage of 100 kV.

Medusa 82 for EUV applications

For an optimum handling of EUV lithography using the RWTH system, a sensitivity range of 30-40 mJ/cm² is desired. A Medusa 82 sample supplemented with 2.5 % photoacid generator (PAG) already reached this target range. These investigations will be continued within the scope of a research project.

Medusa 82: Influence of post exposure bake (PEB)

The addition of photoacid generators (PAGs) can significantly increase the sensitivity of Medusa 82 (see Resist Wiki “Medusa with photoacid generator”). Another option is to add a PEB after e-beam exposure. Even if substrates were previously stored for several days, the sensitivity significantly increases depending on the temperature and the duration of the PEB.