Resist of the month of April: Fluorescent negative photoresist Atlas 46 S

These poly(phthalaldehydes) are also suitable for electron beam lithography and for the fabrication of 200 nm thick fibers (electrospinning). The material produced from these threads evaporates immediately upon heating, which offers interesting application possibilities.

Resist of the month January: SU 8 alternative – negative photoresist Atlas 46

The outstanding properties of SU-8 are well known to all users of microsystem technologies. Allresists new negative resist Atlas 46 S (solid) can easily be processed with high reproducibility of all properties and with high restistance of resist structures to all commonly used solvents. Atlas 46 S is thus perfectly suitable for all applications in which the layer is intended to remain permanently and resistively on the substrate.

Resist of the month of October: Fluorescent resist structures with SX AR-P 672.08

Fluorescent structures are needed for optical components and in microscopy. In close collaboration with Precision Optics Gera GmbH we now achieved to add fluorescent dyes to PMMA e-beam resists on anisole basis which subsequently could be structured by electron beam lithography.

Resist of the month April – Thermally developable positive resist Phoenix 81

These poly(phthalaldehydes) are also suitable for electron beam lithography and for the fabrication of 200 nm thick fibers (electrospinning). The material produced from these threads evaporates immediately upon heating, which offers interesting application possibilities.

Resist of the month January 2017: Optimised negative spray resist AR-N 2200

Spray resist AR-N 2220 is the only ready-to-use negative resist worldwide. This eliminates the need for the time-consuming and inaccurate mixing of a resist with solvents.

Resist of the month October 2016: Optimised T-gate structures with three-layer system PMMA, copolymer 617 and CSAR 62

T-gates are required for the manufacture of high-quality transistors. Allresist optimised several three-layer systems for this particular application and designed both universal developers for a single development step, as well as individual developers which are suitable to develop each one of the three layers specifically.

Resist of the month July 2016: Negative PMMA resist for photolithography

Sensitive substrates do not tolerate aqueous-alkaline developers. For such cases, X AR-N 4800/16 was developed already several years ago. While this resist met all the demands placed on it, only a layer build up to 70 % with moderate sensitivity was possible.

Resist of the month January 2016: Electra 92 has now gone into production!

Electra 92 has passed its baptism of fire by the users very well, and an increasingly large number of satisfied customers provided positive feedbacks with respect to the excellent properties of resist AR-PC 5090.02.

Resist of the month October 2015: E-beam lithography on glass – CSAR 62 and Electra 92

Allresist presented this precise and easy to handle two-layer system already on the MNE (Micro and Nano Engineering) 2015 in Den Haag with great success.

Resist of the month Juli 2015: Process-adapted two-layer resist AR-BR 5460

The bottom resist AR-BR 5460 has already been used for a decade in combination with positive (e.g. AR-P 3510) or negative resists (e.g. AR-N 4340) for a large variety of lift-off applications.