Resist für die Startseite (Resist des Monats)
We continued the development work on our new Atlas 46 photoresist also in 2021. Due to own results or recommendations and requests from our users, its formulation and properties were now improved.
In 2004, the first bottom resist (BR) was developed in collaboration with the Center for Intelligent Systems (CiS, Erfurt). This bottom resist is non-light sensitive and can be developed in an aqueous alkaline manner.
Optically dense resists play an increasingly important role in industry. So-called black resists are required in optical industry, in automotive industry (for headlights) and in the manufacture of rotary encoders.
Medusa 82 UV was already chosen as resist of the month in January 2019. Back then, we highly appreciated the first results for a use as photoresist. Shown are now results with respect to an application in grayscale lithography which were also presented at the MNE 2019 in Greece.
Allresist now developed Medusa 82 as an alternative to HSQ resists. Due to a modification of the polymer, resist Medusa 82 can be handled very easily.
Our research team successfully developed a negative resist with high resolution and plasma etching stability in oxygen. Already with the first samples, it was possible to achieve the properties of HSQ.
These poly(phthalaldehydes) are also suitable for electron beam lithography and for the fabrication of 200 nm thick fibers (electrospinning). The material produced from these threads evaporates immediately upon heating, which offers interesting application possibilities.
The outstanding properties of SU-8 are well known to all users of microsystem technologies. Allresists new negative resist Atlas 46 S (solid) can easily be processed with high reproducibility of all properties and with high restistance of resist structures to all commonly used solvents. Atlas 46 S is thus perfectly suitable for all applications in which the layer is intended to remain permanently and resistively on the substrate.
Fluorescent structures are needed for optical components and in microscopy. In close collaboration with Precision Optics Gera GmbH we now achieved to add fluorescent dyes to PMMA e-beam resists on anisole basis which subsequently could be structured by electron beam lithography.
These poly(phthalaldehydes) are also suitable for electron beam lithography and for the fabrication of 200 nm thick fibers (electrospinning). The material produced from these threads evaporates immediately upon heating, which offers interesting application possibilities.