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These poly(phthalaldehydes) are also suitable for electron beam lithography and for the fabrication of 200 nm thick fibers (electrospinning). The material produced from these threads evaporates immediately upon heating, which offers interesting application possibilities.
Spray resist AR-N 2220 is the only ready-to-use negative resist worldwide. This eliminates the need for the time-consuming and inaccurate mixing of a resist with solvents.
T-gates are required for the manufacture of high-quality transistors. Allresist optimised several three-layer systems for this particular application and designed both universal developers for a single development step, as well as individual developers which are suitable to develop each one of the three layers specifically.
Sensitive substrates do not tolerate aqueous-alkaline developers. For such cases, X AR-N 4800/16 was developed already several years ago. While this resist met all the demands placed on it, only a layer build up to 70 % with moderate sensitivity was possible.
Electra 92 has passed its baptism of fire by the users very well, and an increasingly large number of satisfied customers provided positive feedbacks with respect to the excellent properties of resist AR-PC 5090.02.
Allresist presented this precise and easy to handle two-layer system already on the MNE (Micro and Nano Engineering) 2015 in Den Haag with great success.
The bottom resist AR-BR 5460 has already been used for a decade in combination with positive (e.g. AR-P 3510) or negative resists (e.g. AR-N 4340) for a large variety of lift-off applications.
The negative resist AR-N 4400-10 was structured with a laser direct imaging system at an exposure wavelength of 405 nm. The figures below show different arrays with column diameters varying from 5 to 50 µm.