Resist of the month October 2015: E-beam lithography on glass – CSAR 62 and Electra 92
Allresist presented this precise and easy to handle two-layer system already on the MNE (Micro and Nano Engineering) 2015 in Den Haag with great success.
Resist für die Startseite (Resist des Monats)
Allresist presented this precise and easy to handle two-layer system already on the MNE (Micro and Nano Engineering) 2015 in Den Haag with great success.
The bottom resist AR-BR 5460 has already been used for a decade in combination with positive (e.g. AR-P 3510) or negative resists (e.g. AR-N 4340) for a large variety of lift-off applications.
The negative resist AR-N 4400-10 was structured with a laser direct imaging system at an exposure wavelength of 405 nm. The figures below show different arrays with column diameters varying from 5 to 50 µm.