Resist Wiki: Photoresists – Image Reversal

Special resist SX AR-N 4810/1 developable without water

The new special resist SX AR-N 4810/1 is a chemically enhanced PMMA-based photoresist and water-free – critically important in the case of moisture-sensitive substrates – which can be developed with organic solvents.
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Resist for near infrared (NIR)

The sensitivity for the different laser wavelengths is considerably increased if dyes absorbing at the respective wavelength are added. A structuring is in this case possible with pulsed laser light both at 532 nm and at 1064 nm.
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Aqueous negative resist based on gelatine

In the presence of catalytic iron salts, it is possible to photochemically induce a negative crosslinking of gelatine. Coated substrates are for this purpose exposed and briefly swivelled in diluted hydrogen peroxide solution which acts as crosslinking agent.
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Aqueous resist system

In the presence of catalytic working iron salts, gelatine can be cross-linked photochemically in a negative process. A major advantage of these resists lies in their high environmental compatibility,
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Positive polyimide one-layer resist

Polyimides are produced by polycondensation of tetracarboxylic dianhydrides and diamines. For highest thermal strain only polyimides are suitable which contain aromatic building blocks in the polymer chain.
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UV-patterning of PMMA resists

PMMA resists can also be patterned using UV-lithography, but only at exposure wavelengths of 200 – 270 nm (deep UV light). Typically used is the wavelength-range of the lowest line of high-
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Polyimide two-layer systems

In certain applications it is desirable to keep the original properties of a polymer unchanged, e.g. without addition of light-sensitive components like for example for a use as moisture sensor.
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Conductive films

During e-beam lithography applications on isolating substrates, in particular on quartz-masks or glass, the impact of energy-rich electrons often give rises to strong surface charges.
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Two-layer resist system for hydrofluoric acid etching

Hydrofluoric acid etchings, even those in highly concentrated acids (48%), are technologically used despite the high risk involved with HF applications. Technological problems are discussed in the section "Wet-
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Negative polyimide photoresist

As an alternative to the positive polyimide resist (SX AR-PC 5000/82.7), which already contains polyimide as solvent and thus requires no curing at 350-400°C (see "Positive polyimide resist")
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