The resolution of resists is influenced by several parameter such as e.g. the type of mask liner used, most of the respective NA (numerical aperture), film thickness, exposure wavelength,
Photoresists of the AR-product lines 3000 to 4000 display a very high etch resistance due to the polymers which are used for their production. This is especially the case for dry etch processes such as e.
Concentrated oxidising acids (sulphuric acid, nitric acid, aqua regia 1) , piranha 2) ) attack resist films already at room temperatures and are often used as removers for persistent resist structures.
The positive tone photoresist X AR-P 3100/10 is extremely adhesion enhanced and thus suitable for HF etching of up to 5 % HF. In particular on glass or silicon oxide, a pre-treatment of substrates with the adhesion promoter AR 300-
With respect to the source materials used, photoresists fall into two different categories: PMMA resists (protective coating AR-PC 5000/4, -503, 504, SX AR-N 4800) Novolak resists (AR-