Poly(phthalaldehyde)-based electron beam resists

A direct positive patterning of PPA layers is possible by electron bombardment. Similar to the irradiation of normally used e-beam resists like e.g. CSAR 62 or PMMA, the electron beam causes a fragmentation of the polymer chains.

Resists for novel applications in lithography – thermally structurable polymers

Within the scope of the Eurostar project PPA-Litho, Allresist currently evaluates innovative high-quality resists on poly(phthalaldehyde) (PPA) basis in cooperation with the company Aglycon, the Joanneum Research in Weiz, and the SwissLitho AG in Zurich.

Patterning of the conductive protective coating Electra 92

A negative resist (e.g. AR-N 4340) is coated onto the substrate, exposed, and developed. The exposure dose should be chosen as small as possible to provide the desired slight undercut which supports the later lifting.

High resolution on quartz with Electra 92 on HSQ resists

An accurate patterning on quartz substrates is not possible without the use of a conductive coating. Investigations of the company Raith GmbH demonstrated that an HSQ resist XR1541 on a quartz substrate can be patterned with very high quality after coating with Electra 92.

CSAR 62 Avoidance of particles during large-area exposures

During the exposure and subsequent development of large structures (> 1 µm), occasionally particles are deposited on fully developed surfaces

CSAR 62 lift-off for thick layers

For special applications in which metal layers with a thickness of a few hundred nanometres are to be generated by lift-off techniques, accordingly higher layers are needed.

CSAR 62 thick layers

Intense plasma etchings for the generation of deep etch structures however require significantly thicker resist layers and place special demands on resolution and contrast.

Thick CSAR 62

A few applications like e.g. the manufacture of deep etched structures by plasma etching require a processing of thick resist layers. Of major importance in this case is a high sensitivity, especially in electron beam lithography.

Chemically amplified, highly sensitive negative e-beam resist SX AR-N 7730/37

With SX AR-N 7730/37, we present a new negative CAR e-beam resist. This resist possesses a very high sensitivity with at the same time high process stability.

Ratio resolution and dose, exemplarily shown for e-beam resist SX AR-N 7530/1

Process-stable negative resist systems which allow resolutions of < 30 nm with sufficiently high sensitivity are of growing interest for applications in electron beam lithography.