For an optimum handling of EUV lithography using the RWTH system, a sensitivity range of 30-40 mJ/cm² is desired. A Medusa 82 sample supplemented with 2.5 % photoacid generator (PAG) already reached this target range. These investigations will be continued within the scope of a research project.
The addition of photoacid generators (PAGs) can significantly increase the sensitivity of Medusa 82 (see Resist Wiki “Medusa with photoacid generator”). Another option is to add a PEB after e-beam exposure. Even if substrates were previously stored for several days, the sensitivity significantly increases depending on the temperature and the duration of the PEB.
One disadvantage of HSQ and Medusa 82 is the comparably low sensitivity, which can however be increased by an addition of photoacid generators.
Our research team successfully developed a negative resist with high resolution and plasma etching stability in oxygen: Medusa 82. Already with the first samples, it was possible to achieve the properties of HSQ.
The coating with Electra 92 on highly electrically insulating polymers or also on glass allowed a high-quality imaging of nanostructures in SEM.
With SX AR-N 7730/37, we present a new negative CAR e-beam resist. This resist possesses a very high sensitivity with at the same time high process stability.
Process-stable negative resist systems which allow resolutions of < 30 nm with sufficiently high sensitivity are of growing interest for applications in electron beam lithography.
The general aim of electron beam lithography is to achieve a maximum resolution, and therefore mostly very thin layers are used (50 – 500 nm). In a few cases however also very small structures with high aspect ratio are of interest.
Allresist designed an e-beam resist which produces, depending on the respective exposure dose used, a three-dimensional resist profile. For general structuring purposes, only a two-
A process-stable, sufficiently sensitive e-beam resist with a resolution of about 30 nm is urgently needed to accelerate the progress in electron beam lithography. Chemically enhanced e-