High-resolution negative e-beam resist
A process-stable, sufficiently sensitive e-beam resist with a resolution of about 30 nm is urgently needed to accelerate the progress in electron beam lithography.
Sensitive, etch-stable negative e-beam resist for processes without yellow light
The success story of electron beam lithography began in the 1980th with the development of the first PMMA resists. These resists are absolutely light-insensitive in the UV-wavelength range above 300 nm.