Waterfree developable special resist SX AR-N 4810/1

The new special resist SX AR-N 4810/1 is a chemically enhanced photo resist based on PMMA, which can be developed waterfree – crucial in the case of moisture-sensitive substrates – with organic solvents.

Top surface imaging (TSI) photoresist – principles

Roland and Coopmans intensively studied the fundamentals of the top surface imaging technology which is based on a selective resist silylation process (DESIRE process). A positive photoresist specifically optimised for this purpose with considerably increased content of light-sensitive components (LSCs) is exposed image-wise.

Positive resist for temperature sensitive substrates

In many cases, substrates meant to be structured may not be heated above 50 – 70 °C. These can be glass partitions which distort at higher temperatures and thus might lose their size accuracy. However, some organic polymers which are to be coated are temperature sensitive. Moreover, thermosensitive structures may already exist on the substrates.

Chemically enhanced negative resist without cross-linking

In some applications, the substrate on which the negative resist is to be applied cannot be heated. This may be the case for sensitive glass and especially for very big substrates.

Negative poly(hydroxystyrene) and (hydroxystyrene-co-MMA) photoresist with high-temperature stability

As an alternative to the polyimide negative resist, SX AR-N 4340/6 was developed, a highly sensitive CAR negative resist based on polyhydroxystyrene, which can be developed under aqueous-alkaline conditions.

Structuring by ablation of the resist materials

The basic principle of laser ablation is that laser irradiation of a certain wavelength introduces so much energy into the resist material which is modified for ablation that the resist polymer is destroyed and then vaporizes as low molecular weight fragments.

Bleachable resists

The basic idea behind dyed resists developed within the scope of the Photoenco project (June 2016 – May 2019) was that dyes are mixed into the polymer matrix of the resist which then either change their colour or become colourless upon irradiation.

Fluorescent resist structures with photoresists

Photoresists can also be used to incorporate fluorescent dyes. Particularly negative-tone photoresists are of interest in this regard, since the use of selected fluorescent dyes allows defining an adjustable emission in variable wavelength ranges. Resist layers with violet, blue, yellow, orange, or red fluorescence were produced by embedding the respective dyes into the negative-working Atlas 46 S resist.

Atlas 46 for nanoimprint lithography

The new development Atlas 46 could also be successfully used for nanoimprinting (University of Wuppertal, working group of Prof. Scheer). In a first step, nanostructures were produced with the negative-working resist

Coloured negative photoresists

Allresist now also offers colored negative resists with the designation SX AR-N 8500. The difference to FUJIFILM resists is that only dyes and no pigments are dissolved in the resists. This allows to achieve a high resolution and high edge sharpness.