CAR 44 on copper
If negative photoresist CAR 44 (AR-N 4400) is directly used on copper or copper-containing substrates, the following points must be observed.
If negative photoresist CAR 44 (AR-N 4400) is directly used on copper or copper-containing substrates, the following points must be observed.
AR-N 4400-50 was investigated at the TU Braunschweig with particular regard to the fabrication of well-defined resist architectures with vertical flanks.
The negative photoresist experimental sample SX AR-N 7100 is a surface imaging and dry developable system. With this system, structures can be transferred into thick resist layers by means of plasma etching.
A large variety of applications include a wet-chemical etching step which very often involves highly alkaline etching baths.
Bottom resist AR-BR 5460 has already been used for a decade in combination with positive (e.g. AR-P 3510) or negative resists (e.g. AR-N 4340) for a large variety of lift-off applications.
PPA layers are sensitive to light and can thus be structured directly by photolithography. Irradiation with light of wavelengths < 300 nm (Hg vapour lamp) results in a cleavage of the polymer chains and the formation of volatile components that partly begin to evaporate even at room temperature.
Structures of the image reversal resist AR-U 4060 show an increased resistance against organic solvents after flood exposure with subsequent tempering. Ethanol and toluene attack normal positive resist layers quickly, which are consequently dissolved in short time.
If contact of a substrate with water must be avoided during the patterning process, a two-component photoresist system composed of PMMA resist (bottom layer) and photoresist (top layer) offers an alternative to SX AR-N 4810/1.
The desired structure size also largely depends on the exposure dose used. In the case of overexposure, structures begin to widen which is particularly pronounced during laser exposure.
With laser direct exposure, a slight undercut of the structures can be generated: The upper part of the layer is more strongly irradiated due to the absorption of the resist and consequently more intensely crosslinked.