Laser ablation of PPA (Phoenix 81)
PPA layers can also be structured by laser ablation. Substrates coated with AR-P 8100 were structured with pulsed laser light at different wavelengths at the IOM Leipzig (Dr. Klaus Zimmer). In this process, architectures with very little edge roughness could be generated. In the absorption range of PPA, at 248nm, complete ablation was achieved without damaging the silicon substrate.