Adaptable two-layer resist AR-BR 5460 for variable lift-off structures

Bottom resist AR-BR 5460 has already been used for a decade in combination with positive (e.g. AR-P 3510) or negative resists (e.g. AR-N 4340) for a large variety of lift-off applications.

Thermostable photoresists

Structures of the temperature-stable negative resist SX AR-N 4340/6 are able to withstand temperatures of up to 350 °C with high shape accuracy

Laser direct exposure with AR-P 3540

In addition to a structuring with photomasks which is frequently used in lithography, is it also possible to write the structures directly, i.e. without masks, with laser beams.

Alkali-stable, easily structurable positive resist SX AR-P 5900/8

Resist AR-P 5900/4 is already well established on the market for many years. Structures of this positive resist are characterized by a considerably higher alkaline stability as compared to standard positive resists (e.g. AR-P 3510 or AZ resists).

New procedure for the spray coating of deep topologies with SX AR-P 1250/20

In the CiS Institute for Microsensors, deep silicon etch grooves are structured for the fabrication of customer-specific components. For this purpose, a coating procedure via spray coating was developed.

Photoresist coatings on Teflon substrates

Teflon or similar products are, due to their extreme surface properties, utilised for applications in which a structuring of the Teflon is sometimes desirable. The hydrophobic surface properties however impede the coating with resist,

Spray resists for different topologies (positive and negative)

Spray resists available to date (AZ 4999) are designed for extreme topologies, which means that even vertical silicon trench sidewalls can be covered with resist. These excellent features however come at a price:

Resist for 488 nm exposure wavelength

General exposure wavelengths for broadband UV-lithography are in a range between 300 nm and 450 nm, which includes the important lines of high-pressure mercury lamp at 436 nm (g-line).