New developers for AR-P 617
Our highly sensitive e-beam resist AR-P 617 is frequently used in two-layer processes, mostly in combination with PMMA, for the production of lift-off architectures like e.g. T-gates.
Alkaline developers for aluminium substrates
Some of our customers use alkali-sensitive aluminium substrates. This leads to problems if the metal surface should not be etched in this process.
New developer for AR-P 5320
In our product information, we recommend developer AR 300-26 for the development of AR-P 5320, our positive photoresist for lift-off applications. A few users however prefer to work with MIF-developers.
Developer AR 300-35 for alkali-sensitive substrates
The use of aqueous-alkaline developers on alkali-sensitive substrates like aluminium is problematic, because the substrate is similarly attacked during the development step.
New safer solvent remover AR 300-76
A further new development, the likewise universally applicable remover AR 300-76, is characterized by a much higher flash point of 103°C as compared to AR 600-71.
Developer for CSAR 62 (AR-P 6200)
For a development of exposed CSAR 62 resist films generally performed by immersion development with development times of approximately 30-60 seconds, developers AR 600-546, 600-548 and 600-549 are well suited.
Adhesive strength of AR 300-80
In order to prevent the above described stripping of the PMMA layer from the wafer, the use of adhesion promoters is strongly recommended. Helpful is also a tempering of the wafers at maximum temperature (if possible > 200°C)
Adhesion promoter HMDS and diphenylsilanediol (AR 300-80)
The adhesion of resists to different substrates varies. Many substrates like e.g. silicon, silicon nitride and base metals (like aluminium, copper) show generally good resist adhesion features,
Alternatives for NMP-based removers
On September 25, 2009, regulation (EC) No 790/2009 amending EC-GHS regulation (No 1272/2008) on the classification and labelling of substances and mixtures came into force. With this regulation also the new classification of N-
Thinner
Correct dilution of resists (see “Dilution of resists”) Resists are mainly composed of solvents. The majority of photoresists and the negative-tone e-beam resists utilize PGMEA (PMA)