A large variety of applications include a wet-chemical etching step which very often involves highly alkaline etching baths.
Negative resist AR-N 4400-10 can be structured with laser direct exposure at an exposure wavelength of 405 nm. Different arrays are shown in the figure.
If the negative resist AR-N 4400-50 is utilised, resist layers of >200 µ m can be built up in repeated coating steps (see product information of CAR 44). Decisive for the quality of the layers to be obtained is the bake procedure.
Resist of the month October 2012: Negative photoresists AR-N 4400 – with optimized bake regime For the new project VEGAS (see AR NEWS, 25 th issue, October 2012), columnar resist structures with a thickness of 10 to up to 60 µm are required.