Developer AR 300-46
For the development of photoresists and novolac-based e-beam resist films
Characterisation
- metal ion-free aqueous-alkaline solutions for the processing of photo/ e-beam resists
- reduce the risk of metal ion contamination at the substrate surface
- residue-free development
- metal ion content < 0.1 ppm
- main component TMAH
Properties
- Normality (n)0,24 n
- Density at 20 °C (g/cm3)0,99 g/cm³
- Surface tension (mN/m)max. 32 mN/m
- Filtration (μm)0,2 µm
- Storage 6 month (°C)10 - 22 °C
Available order sizes
- 1 x 2.5 L
- 4 x 2.5 L
- 1 x 5 L
- 4 x 5 L
- 20 x 5 L
Please contact us for further requests.