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Developer AR 300-475

For the development of photoresists and novolac-based e-beam resist films

Characterisation

  • metal ion-free aqueous-alkaline solutions for the processing of photo/ e-beam resists
  • reduce the risk of metal ion contamination at the substrate surface
  • residue-free development
  • metal ion content < 0.1 ppm
  • main component TMAH

Interesting Resist Wiki articles

Properties

  • Normality (n)
    0,17 n
  • Density at 20 °C (g/cm3)
    0,99 g/cm³
  • Surface tension (mN/m)
    max. 32 mN/m
  • Filtration (μm)
    0,2 µm
  • Storage 6 month (°C)
    10 - 22 °C

Available order sizes

  • 1 x 2.5 L
  • 4 x 2.5 L
  • 1 x 5 L
  • 4 x 5 L
  • 20 x 5 L

Please contact us for further requests.

Suitable products

Photoresist AR-N 4340 (CAR)

Highly sensitive negative resist for the production of integrated circuits

Photoresist AR-N 4400 series

Thick and very thick negative resists for electroplating, microsystem technology and LIGA

Photoresist SX AR-N 4340/7

Negative photoresist for one- and two-layer systems, thermostable up to 300 °C

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