E-Beam Resist AR-N 7500 series
Product on demand
(AR-N 7500.08, AR-N 7500.18)
High resolution, process-stable resist for mix & match-processes
Please contact us for further requests.
Characterisation
- e-beam, deep UV, i-line, g-line
- intermediate sensitivity
- mix & match-processes between e-beam and UV exposure 310 – 450 nm, positive or negative depending on the exposure wavelength chosen
- high resolution, process-stable (no CAR)
- plasma etching resistant, temp.-stable up to 120 °C
- novolac, naphthoquin. diazide, organic crosslink. a.
- safer solvent PGMEA
Interesting Resist Wiki articles
Properties
AR-P 7500.08
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Film thickness/4.000 rpm: 0,10 µm
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Resolution best value: 40 nm
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Contrast: 5
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Flashpoint: 42 °C
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Storage 6 month: 10-18 °C
AR-P 7500.18
Available order sizes
- 1 x 100 ml (experimental sample)
- 1 x 250 ml
- 1 x 1000 ml
- 6 x 1000 ml
Suitable process chemicals
Structure resolution
AR-N 7500.18: Film thickness 400 nm lattice with 70 nm lines
Process parameters
- SubstrateSi 4“ waver
- Soft bake
85 °C, 90 s, hot plate
- Exposure
ZBA 21, 30 kV
- Development
AR 300-47, 4 : 1, 60 s, 22 °C
Spin curve
Resist structures
AR-N 7500.18: rows of cylinders with a diameter of 500 nm