E-Beam Resist AR-N 7520 new series
(AR-N 7520.07 new, AR-N 7520.11 new, AR-N 7520.17 new)
Highest resolution and highly sensitive resist for mix & match
Characterisation
- e-beam, deep UV, i-line (formerly SX AR-N 7520/4)
- short writing times, very high contrast
- mix & match processes between e-beam and UV exposure 248-365 nm, negative in the UV range
- highest resolution, very process-stable (no CAR)
- plasma etching resistant, temp.-stable up to 140 °C
- novolac, organic crosslinking agent
- safer solvent PGMEA
Interesting Resist Wiki articles
Properties
AR-N 7520.07 new
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Film thickness/4.000 rpm: 0,10 µm
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Resolution best value: 30 nm
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Contrast: 8
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Flashpoint: 42 °C
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Storage 6 month: 10-18 °C
AR-N 7520.11 new
AR-N 7520.17 new
Available order sizes
- 100 ml
- 250 ml
- 1 x 1000 ml
- 6 x 1000 ml
Suitable process chemicals
Structure resolution
AR-N 7520.07 new: 30-nm lines at a film thickness of 90 nm
Process parameters
- SubstrateSi 4“ waver
- Soft bake
85 °C, 90 s, hot plate
- Exposure
Raith Pioneer, 30 kV
- Development
AR 300-47, 60 s, 22 °C
Spin curve
Resist structures
AR-N 7520.17 new: 400- and 600-nm lines, film thickness 400 nm