E-Beam Resist AR-N 7520 series
(AR-N 7520.073, AR-N 7520.18)
High resolution resist for mix & match-processes, for high-precision edges
Please contact us for further requests.
Characterisation
- e-beam, deep UV, i-line
- very high contrast, excellent transfer of structures, high-precision edges
- mix & match processes between e-beam and UV exposure 248-365 nm
- highest resolution, very process-stable (no CAR)
- plasma etching resistant, temp.-stable up to 140 °C
- novolac, organic crossl. agent, safer solvent PGMEA
Interesting Resist Wiki articles
Properties
AR-N 7520.073
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Film thickness/4.000 rpm: 0,10 µm
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Resolution best value: 28 nm
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Contrast: 10
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Flash point: 42 °C
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Storage 6 month: 10-18 °C
AR-N 7520.18
Available order sizes
Product on request
Suitable process chemicals
Structure resolution
400 nm lines with AR-N 7520.073
Process parameter
- SubstrateSi 4“ waver
- Soft bake
85 °C, 90 s, hot plate
- Exposure
Raith Pioneer 30 kV
- Development
AR 300-47, 60 s, 22 °C
Spin curve
Resist structures
1 μm line with high-precision edges, AR-N 7520.18, resist thickness 340 nm, 1.400 μC/cm², 100 kV