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E-Beam Resist AR-N 7520 series

(AR-N 7520.073, AR-N 7520.18)

High resolution resist for mix & match-processes, for high-precision edges

Characterisation

  • e-beam, deep UV, i-line
  • very high contrast, excellent transfer of structures, high-precision edges
  • mix & match processes between e-beam and UV exposure 248-365 nm
  • highest resolution, very process-stable (no CAR)
  • plasma etching resistant, temp.-stable up to 140 °C
  • novolac, organic crossl. agent, safer solvent PGMEA

Interesting Resist Wiki articles

Properties

  • Film thickness/4.000 rpm:     0,10 µm
  • Resolution best value:           28 nm
  • Contrast:                                  10
  • Flash point:                             42 °C
  • Storage 6 month:                  10-18 °C

Available order sizes

Product on request

Please contact us for further requests.

Suitable process chemicals

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-46

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

Remover AR 300-73

For the stripping of tempered photoresist and e-beam resist films

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution

400 nm lines with AR-N 7520.073

Process parameter

  • Substrate
    Si 4“ waver
  • Soft bake

    85 °C, 90 s, hot plate

  • Exposure

    Raith Pioneer 30 kV

  • Development

    AR 300-47, 60 s, 22 °C

Spin curve

Resist structures

1 μm line with high-precision edges, AR-N 7520.18, resist thickness 340 nm, 1.400 μC/cm², 100 kV

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