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E-Beam Resist AR-P 617 series

(AR-P 617.03, AR-P 617.06, AR-P 617.08, AR-P 617.14)

Resists for nanometer lithography, highest resolution, Copolymer 33% MA

Characterisation

  • e-beam, deep UV (248 nm)
  • highest resolution, high contrast
  • strong adhesion to glass, silicon and metals
  • 3-4 times more sensitive than PMMA
  • sensitivity can be adjusted via the softbake
  • for planarization and multi-layer processes
  • temperature-stable up to 240 °C
  • copolymer on the basis of methyl methacrylate and methacrylic acid, safer solvent 1-methoxy-2-propanol

Interesting Resist Wiki articles

Properties

  • Film thickness/4000 rpm:  0,09 µm
  • Resolution best value:       10 nm
  • Contrast:                               6
  • Flash point:                         38 °C
  • Storage 6 month:              10 – 18 °C

Available order sizes

  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1000 ml
  • 6 x 1000 ml

Please contact us for further requests.

Suitable process chemicals

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 600-50

For the development of e-beam resists films

Developer AR 600-55

For the development of e-beam resists films

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Stopper AR 600-60

For the stopping of e-beam resist film development with solvents

Thinner AR 600-07

For adjusting the film thickness of photoresists and e-beam resists

Resist structures

AR-P 617.03 150 nm lines across 200 nm oxide steps

Spin curve

Film thickness of AR-P 617 vs. solids content and spin number

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