E-Beam Resist AR-P 617 series
(AR-P 617.03, AR-P 617.06, AR-P 617.08, AR-P 617.14)
Resists for nanometer lithography, highest resolution, Copolymer 33% MA
Characterisation
- e-beam, deep UV (248 nm)
- highest resolution, high contrast
- strong adhesion to glass, silicon and metals
- 3-4 times more sensitive than PMMA
- sensitivity can be adjusted via the softbake
- for planarization and multi-layer processes
- temperature-stable up to 240 °C
- copolymer on the basis of methyl methacrylate and methacrylic acid, safer solvent 1-methoxy-2-propanol
Interesting Resist Wiki articles
Properties
AR-P 617.03
-
Film thickness/4000 rpm: 0,09 µm
-
Resolution best value: 10 nm
-
Contrast: 6
-
Flash point: 38 °C
-
Storage 6 month: 10 – 18 °C
AR-P 617.06
AR-P 617.08
AR-P 617.14
Available order sizes
- 1 x 100 ml (experimental sample)
- 1 x 250 ml
- 1 x 1000 ml
- 6 x 1000 ml
Please contact us for further requests.
Suitable process chemicals
Resist structures
AR-P 617.03 150 nm lines across 200 nm oxide steps
Spin curve
Film thickness of AR-P 617 vs. solids content and spin number
