E-Beam Resist AR-P 6200 series (CSAR 62)
(AR-P 6200.04, AR-P 6200.09, AR-P 6200.13, AR-P 6200.18)
High-contrast e-beam resists for the production of integrated circuits and masks
Characterisation
- e-beam; layer thickn. 0,05-1,6 μm (6000-1000 rpm)
- high sensitivity which can be adjusted via the developer
- highest resolution (< 10 nm) and very high contrast
- highly process-stable, high plasma etching resistance
- easy fabrication of lift-off structures
- poly(α-methyl styrene-co-α-chloroacrylate methylester)
- Safer Solvent Anisole
Properties
AR-P 6200.04
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Filmthickness/4.000 rpm: 0,08 µm
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Resolution: 6 nm
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Contrast: 14
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Flash point: 44 °C
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Storage 6 month: 10-18 °C
AR-P 6200.09
AR-P 6200.13
AR-P 6200.18
* Products have a guaranteed shelf life of temperatures from the date of sale if stored correctly and can also be used without guarantee until the date indicated on the label.
Available order sizes
- 1 x 30 ml
- 1 x 100 ml (experimental sample)
- 1 x 250 ml
- 1 x 1 L
- 6 x 1 L
Please contact us for further requests.
Suitable process chemicals
Spin curve
Resist structures
AR-P 6200.09: 25-nm structures, film thickness of 180 nm, artwork
Structure resolution
AR-P 6200.04: Resolution of up to 6 nm at film thickness of 80 nm
Process parameters
- Substrate4“ Si-Wafer
- Tempering
150 °C, 60 s, hot plate
- ExposureRaith Pioneer, 30 kV
- Development
AR 600-546, 60 s, 22 °C
Plasma etching resistance
CSAR 62 is characterized by a high plasma etching resistance. In this diagram, plasma etching rates of AR-P 6200.09 are compared with those of
AR-P 3740 (photoresist), AR-P 679.04 (PMMA resist) and ZEP 520A in CF4 + O2 plasma.
CSAR 62 on mask blanks
Fig. 1 CSAR 62 test structure on a mask blank with 50 nm lines and 50 nm trenches; pitch line & space here 99.57 nm
Experts at the HHI Berlin have already tested CSAR 62 on mask blanks ( Fig. 1). They immediately achieved a resolution of 50 nm which is an excellent value for masks. To date, 100 nm lines and above are used on masks. Currently test coatings of mask blanks with CSAR 62 are conducted,
and samples will be offered by our partners to all customers in the near future.
CSAR 62 nanostructures written with 100 kV
Fig. 17 SEM images (gold-sputtered): CSAR 62 nanostructures, parameters: film thickness 200 nm, dose 225 μC/cm2, 100 kV, developer AR
600-546, 3 min, stopper AR 600-60
At the Karlsruhe Institute of Technology, the suitability of CSAR 62 for the fabrication of complex architectures was investigated in detail. CSAR 62 layers were irradiated with e-beam writer EBPG5200Z at 100 kV and developed with developer AR 600-546. The results are shown in the figures
below. A particular challenge is the writing and development of nano-sized hole structures. Using CSAR 62, a diameter of remarkable 67 nm could be realised, whereby the sophisticated structural element shows a very regular pattern.
Science poster MNE 2016
Scientific publications on CSAR 62
CSAR 62 as a negative tone resist for high-contrast e-beam lithography at temperatures between 4 K and room temperature
DOI: 10.1116/1.4965883