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E-Beam Resist AR-P 662 series

(AR-P 662.04, AR-P 662.06)

PMMA resist series 50K – 950K for the production of integrated circuits and masks

Characterisation

  • e-beam, deep UV (248 nm)
  • very good adhesion to glass, silicon and metals
  • for planarization and multi-layer processes
  • highest resolution, high contrast
  • poly(methyl methacrylate) with diff. molecular weights

Interesting Resist Wiki articles

Properties

  • Filmthickness/4.000 rpm:   0,14 µm
  • Resolution:                             6 nm
  • Contrast:                                7
  • Flash point:                            44 °C
  • Storage 6 month:                  10-22 °C

Available order sizes

  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 600-55

For the development of e-beam resists films

Developer AR 600-56

For the development of e-beam resists films

Developer X AR 600-50/2

High-purity and ultra-fine filtered developer for selective T-gate applications

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Stopper AR 600-60

For the stopping of e-beam resist film development with solvents

Thinner AR 600-02

For adjusting the film thickness of photoresists and e-beam resists

Dose sequence of the 600K/950K system

Not yet completely developed at 1800 pC/cm

Definition: The sensitivity is expressed in pC/cm for lines, while the unit for areas is μC/cm².

Formation of undercut vs. exposure dose

Trench width top: 20 nm, measured values in the diagram: width of trenches at the bottom

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