E-Beam Resist AR-P 662 series
(AR-P 662.04, AR-P 662.06)
PMMA resist series 50K – 950K for the production of integrated circuits and masks
Characterisation
- e-beam, deep UV (248 nm)
- very good adhesion to glass, silicon and metals
- for planarization and multi-layer processes
- highest resolution, high contrast
- poly(methyl methacrylate) with diff. molecular weights
Interesting Resist Wiki articles
Properties
AR-P 662.04
- Filmthickness/4.000 rpm: 0,14 µm
- Resolution: 6 nm
- Contrast: 7
- Flash point: 44 °C
- Storage 6 month: 10-22 °C
AR-P 662.06
AR-P 662.09
Available order sizes
- 1 x 100 ml (experimental sample)
- 1 x 250 ml
- 1 x 1 L
- 6 x 1 L
Please contact us for further requests.
Suitable process chemicals
Dose sequence of the 600K/950K system
Not yet completely developed at 1800 pC/cm
Definition: The sensitivity is expressed in pC/cm for lines, while the unit for areas is μC/cm².
Formation of undercut vs. exposure dose
Trench width top: 20 nm, measured values in the diagram: width of trenches at the bottom