E-Beam Resist AR-P 669 series

(AR-P 669.04, AR-P 669.07)

PMMA resist series 50K – 950K for the production of integrated circuits and masks

Product information

Your request for this product

Characterisation

e-beam, deep UV (248 nm)
very good adhesion to glass, silicon and metals
ffor planarization and multi-layer processes
highest resolution, high contrast
poly(methyl methacrylate) with diff. molecular weights

Interesting Resist Wiki articles

23. August 2008

1. What are e-beam resists composed of, and how do they work?

Properties

AR-P 669.04

Film thickness/ 4000 rpm: 0,22 µm
Resolution best value: 6 nm
Contrast: 7
Flash point: 36 °C
Storage 6 month: 10 – 22 °C

AR-P 669.06

AR-P 669.07

Available order sizes

1 x 100 ml (experimental sample)
1 x 250 ml
1 x 1 L
6 x 1 L

Please contact us for further requests.

Suitable process chemicals

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 600-55

For the development of e-beam resists films

Developer AR 600-56

For the development of e-beam resists films

Developer X AR 600-50/2

High-purity and ultra-fine filtered developer for selective T-gate applications

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Stopper AR 600-60

For the stopping of e-beam resist film development with solvents

Thinner AR 600-09

For adjusting the film thickness of photoresists and e-beam resists

Dose sequence of the 600K/950K system

Not yet completely developed at 1800 pC/cm

Definition: The sensitivity is expressed in pC/cm for lines, while the unit for areas is μC/cm².

Formation of undercut vs. exposure dose

Trench width top: 20 nm, measured values in the diagram: width of trenches at the bottom

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