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E-Beam Resist SX AR-N 8200 series (Medusa 82)

(SX AR-N 8200.03,  SX AR-N 8200.06,  SX AR-N 8200.18)

Experimental sample/custom-made product

Characterisation

  • high-resolution e-beam resist (10 nm)
  • etch-stable resist structures available in two film thicknesses
  • comparable to HSQ, but higher process stability, easier to remove, considerably higher shelf life
  • sensitivity is increased by a factor of 20 if an additional tempering step is applied
  • silsesquioxane dissolved in 1-methoxy-2-propanol

Interesting Resist Wiki articles

Properties

  • Film thickness/4000 rpm:  50 nm
  • Resolution best value:       10 nm
  • Contrast:                               5
  • Flash point:                         38 °C
  • Storage 6 month:              8-12 °C

Available order sizes

  • 1x 30 ml (experimental sample)
  • 1 x 100 ml
  • 1 x 250 ml
  • 1 x 1000 ml

Please contact us for further requests.

Suitable process chemicals

Developer AR 300-44

For the development of photoresists and novolac-based e-beam resist films

Thinner AR 600-07

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution

11 nm structures produced with SX AR-N 8200.03/1

Resist structures

100 nm bars with SX AR-N 8200.06/1

Medusa product presentation

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