E-Beam Resist SX AR-N 8200 series (Medusa 82)
(SX AR-N 8200.03, SX AR-N 8200.06, SX AR-N 8200.18)
Experimental sample/custom-made product
Characterisation
- high-resolution e-beam resist (10 nm)
- etch-stable resist structures available in two film thicknesses
- comparable to HSQ, but higher process stability, easier to remove, considerably higher shelf life
- sensitivity is increased by a factor of 20 if an additional tempering step is applied
- silsesquioxane dissolved in 1-methoxy-2-propanol
Properties
SX AR-N 8200.03
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Film thickness/4000 rpm: 50 nm
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Resolution best value: 10 nm
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Contrast: 5
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Flash point: 38 °C
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Storage 6 month: 8-12 °C
SX AR-N 8200.06
SX AR-N 8200.18
Available order sizes
- 1x 30 ml (experimental sample)
- 1 x 100 ml
- 1 x 250 ml
- 1 x 1000 ml
Please contact us for further requests.
Suitable process chemicals
Structure resolution
11 nm structures produced with SX AR-N 8200.03/1
Resist structures
100 nm bars with SX AR-N 8200.06/1
Medusa product presentation
