E-Beam Resist SX AR-N 8400 series (Medusa 84 SiH)
(SX AR-N 8400.04, SX AR-N 8400.08, SX AR-N 8400.12, SX AR-N 8400.22)
Experimental sample/custom-made product
Characterisation
- Hydrogen silsesquioxane dissolved in butyl acetate
- Highest resolution e-beam resist
- Improved shelf life and stability, as butyl acetate reduces gelling and particle formation
- Elimination of the presumably carcinogenic solvent MIBK
Important user information
Medusa 84 SiH must not be transferred to glass containers or filtered using a glass pre-fi lter, as this will cause it to gel irreversibly.
The Medusa 84 SiH has to reach room temperature before opening the bottle. Condensing water can affect the shelf life, as the resist is sensitive to moisture.
Medusa 82/ 82 PAG and new Medusa 84 SiH from 2025 onwards
In a subsequent R&D phase, Allresist enhanced the resolution and plasma etching resistance by optimising the synthesis of the HSQ polymer. The new chemical composition of Medusa 84 SiH exactly matches that of HSQ (hydroxysilsesquioxane). Furthermore, stabilisers now extend the shelf life of Medusa 84 SiH. Our new Medusa 84 SiH achieves resolutions of < 10 nm with higher plasma etching resistance and an improved adhesion compared to Medusa 82/82 PAG. Process and storage stability for low solid content variants such as SX AR-N 8400.04 (50 nm @ 4000 rpm) and SX AR-N 8400.08 (100 nm @ 4000 rpm) is guaranteed for 6 months when stored in a refrigerator (10 °C). Deep-freeze storage extends the shelf life further.
Read more about this in our customer letter.
Properties
SX AR-N 8400.04
- Film thickness/4000 rpm: 50 nm
- Flash point (°C): <35 °C
- Storage 6 month: 8-12 °C
* The products have a guaranteed shelf life of 3 months from the date of sale if stored in accordance with the instructions and can be used without guarantee until the label date. Note: Deep-freeze storage extends the shelf life.
SX AR-N 8400.08
SX AR-N 8400.12
SX AR-N 8400.22
Available order sizes
- 1x 30 ml (experimental sample)
- 1 x 100 ml
- 1 x 250 ml
- 1 x 1000 ml
Suitable process chemicals
Structure resolution
Single lines with a resolution of 3.6 nm and very low LER written with the RAITH Voyager EBL-System at 50kV, 120 pA, dose: 14.700 pC/cm, developer: KOH 1% 1 min. © Raith Dortmund
Resist structures
100 nm line/space structures written on silicon at 1000 μC/cm² @ 100 kV and developed with AR 300-73 (6.5% TMAH solution). © J. Hohmann, KIT-IMT Karlsruhe
Structures with a high aspect ratio
Left: Wall-structures written on GaAs with 600 μC/cm² @100 kV, 200 pA, developed with AR 300-73 (6.5% TMAH) for 60 s, PAB & PEB: 5 min @ 100 °C hotplate. © Yurii Kutovyi, FZ Jülich
Right: Nanorod written on silicon with 2000 μC/cm² @ 50kV and developed with AR 300-44 (2.38% TMAH). Aspect ratio of up to 10 was achieved. © R. Stöhr, ZAQuant University of Stuttgart