E-Beam Resist SX AR-N 8400 series (Medusa 84 SiH)
(SX AR-N 8400.04, SX AR-N 8400.08, SX AR-N 8400.12, SX AR-N 8400.22)
Experimental sample/custom-made product
Characterisation
- Hydrogen silsesquioxane dissolved in butyl acetate
- highest resolution
- improved shelf life, as butyl acetate reduces gelling and particle formation
- Improved stability due to the addition of stabiliser moleculese
- Elimination of the presumably carcinogenic solvent MIBK
Medusa 82/ 82 PAG and new Medusa 84 SiH from 2025 onwards
In a subsequent R&D phase, Allresist enhanced the resolution and plasma etching resistance by optimising the synthesis of the HSQ polymer. The new chemical composition of Medusa 84 SiH exactly matches that of HSQ (hydroxysilsesquioxane). Furthermore, stabilisers now extend the shelf life of Medusa 84 SiH. Our new Medusa 84 SiH achieves resolutions of < 10 nm with higher plasma etching resistance and an improved adhesion compared to Medusa 82/82 PAG. Process and storage stability for low solid content variants such as SX AR-N 8400.04 (50 nm @ 4000 rpm) and SX AR-N 8400.08 (100 nm @ 4000 rpm) is guaranteed for 6 months when stored in a refrigerator (10 °C). Deep-freeze storage extends the shelf life further.
Read more about this in our customer letter.
Properties
SX AR-N 8400.04
- Film thickness/4000 rpm: 50 nm
- Flash point (°C): <35 °C
- Storage 6 month: 8-12 °C
* The products have a guaranteed shelf life of 3 months from the date of sale
if stored in accordance with the instructions and can be used without guarantee until the label date. Note: Deep-freeze storage extends the shelf life.
Do not store Medusa 84 SiH in glass containers as this will cause irreversible gelation of the product.
SX AR-N 8400.08
SX AR-N 8400.12
SX AR-N 8400.22
Available order sizes
- 1x 30 ml (experimental sample)
- 1 x 100 ml
- 1 x 250 ml
- 1 x 1000 ml
Suitable process chemicals
Structure resolution
6 nm lines developed with 1% KOH. The wafer was stored in vacuum for 10 days between coating and lithography and showed no loss of processability or degradation.
© Raith Dortmund
Resist structures
100 nm line/space structures written on silicon at 1000 μC/cm² @ 100 kV and developed with AR 300-73 (6.5% TMAH solution).
© J. Hohmann, KIT-IMT Karlsruhez