E-Beam Resist X AR-N 7700/30

Experimental sample/custom-made product

Chemically enhanced e-beam resist with very high sensitivity

Product information

Your request for this product

Characterisation

e-beam, BB-UV
highest sensitivity, good resolution
good adhesion properties, high contrast, chemically enhanced
mix & match processes between e-beam and BBUV
are possible
plasma etching resistant, very process-stable
Nnovolac with photosensitive acid generator and
aminic crosslinker
safer solvent PGMEA

Interesting Resist Wiki articles

Properties

Film thickness/4000 rpm (μm)
0,4 µm
Resolution (μm)
0,15 µm
Contrast
5,0
Flash point (°C)
42 °C
Storage 6 month (°C)
10 - 18 °C

Available order sizes

1 x 30 ml
1 x 100 ml
1 x 250 ml
2 x 250 ml
1 x 1.000 ml
6 x 1.000 ml

Please contact us for further requests.

Suitable process chemicals

Photoresist AR-P 3110

Adhesion-enhanced positive resists for the production of masks and fine scale divisions

Photoresist AR-P 3120

Adhesion-enhanced positive resists for the production of masks and fine scale divisions

Photoresist AR-P 3170

Adhesion-enhanced positive resists for the production of masks and fine scale divisions

Photoresist AR-P 5320

Sensitive positive-tone resists for the production of evaporation samples

Photoresist AR-P 5350

Sensitive positive-tone resists for the production of evaporation samples

Photoresist AR-U 4030

Image reversal resist for the fabrication of integrated circuits

Photoresist AR-U 4040

Image reversal resist for the fabrication of integrated circuits

Photoresist AR-U 4060

Image reversal resist for the fabrication of integrated circuits

Resist structures

Exposure dose series of SX AR-N 7700/30, lowest dose 10.14 μCi/cm2

Process parameters

Substrate
Si 4" Wafer
Soft bake
85 °C, 60 s, hot plate
Exposure
Vistec Lion 20 kV
Development
AR 300-475, 60 s, 22 °C

Spin curve

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