AR-N 4340

Highly sensitive negative resist for the production of integrated circuits

Product information

Your request for this product

Characterisation

i-line, g-line
highest sensitivity, excellent resolution
good adhesion, high contrast, chemically enhanced
undercut profiles (lift-off) are possible
plasma etching resistant
temperature-stable up to 220 °C after subsequent treatment
novolac with photochemical acid generator and amine-based crosslinking agent
Safer solvent PGMEA

Interesting Resist Wiki articles

Properties

Film thickness/4000 rpm (μm)
1.4 µm
Resolution (μm)
0.5 µm
Contrast
5.0
Flash point (°C)
44 °C
Storage 6 month (°C)
10 - 18 °C

Available order sizes

1 x 100 ml (experimental sample)
1 x 250 ml
1 x 1 L
6 x 1 L

Please contact us for further requests.

Suitable process chemicals

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-475

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-72

For the stripping of tempered photoresist and e-beam resist films

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution

Film thickness 1.4 μm Resist structure 0.7 μm L/S

Resist structures

AR-N 4340: Layer thickness 2.0 μm, resist structure 4.0 μm

Spin curve

Spin curve of AR-N 4340

Process parameters

Substrate
Si 4" Wafer
Tempering
85 °C, 60 s, hot plate
Exposure
i-line Stepper (NA: 0,65)
Development
AR 300-475, 60 s, 22 °C

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