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AR-N 4340

Highly sensitive negative resist for the production of integrated circuits

Characterisation

  • i-line, g-line
  • highest sensitivity, excellent resolution
  • good adhesion, high contrast, chemically enhanced
  • undercut profiles (lift-off) are possible
  • plasma etching resistant
  • temperature-stable up to 220 °C after subsequent treatment
  • novolac with photochemical acid generator and amine-based crosslinking agent
  • Safer solvent PGMEA

Interesting Resist Wiki articles

Properties

  • Film thickness/4000 rpm (μm)
    1.4 µm
  • Resolution (μm)
    0.5 µm
  • Contrast
    5.0
  • Flash point (°C)
    44 °C
  • Storage 6 month (°C)
    10 - 18 °C

Available order sizes

  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Suitable process chemicals

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-475

For the development of photoresists and novolac-based e-beam resist films

Remover AR 300-72

For the stripping of tempered photoresist and e-beam resist films

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution

Film thickness 1.4 μm Resist structure 0.7 μm L/S

Resist structures

AR-N 4340: Layer thickness 2.0 μm, resist structure 4.0 μm

Spin curve

Spin curve of AR-N 4340

Process parameters

  • Substrate
    Si 4" Wafer
  • Tempering
    85 °C, 60 s, hot plate
  • Exposure
    i-line Stepper (NA: 0,65)
  • Development
    AR 300-475, 60 s, 22 °C

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