AR-N 4400 series (CAR 44)

(AR-N 4400-05, AR-N 4400-10, AR-N 4400-25, AR-N 4400-50)

Thick and very thick negative resists for electroplating, microsystem technology and LIGA < 20 μm - > 50 μm

Characterisation

  • i-, g-line, e-beam, broadband UV
  • chemically enhanced, very good adhesion, electro plating-stable
  • very high sensitivity, easy removal
  • profiles with high edge steepness for excellent resolution
  • covering of topologies
  • 4400-05 for layer thicknesses up to 10 μm (250 rpm)
  • 4400-10 for layer thicknesses up to 20 um (250 rpm)
  • 4450-10T for film thicknesses up to 20 μm and lift-off
  • 4400-25 for high film thicknesses up to 50 μm (250 rpm)
  • 4400-50 for highest film thicknesses up to 100 μm
  • novolac, crosslinking agent, amine-based acid generator
  • safer solvent PGMEA

Properties

  • Layer thickness/1,000 rpm:   5 µm
  • Resolution:                               1.0 µm
  • Contrast:                                   4.0
  • Flash point:                              46 °C
  • Storage up to 6 months:        10-18 °C

* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond this without guarantee until the label date.

Available order sizes

  • 1 x 100 ml (experimental sample)
  • 1 x 250 ml
  • 1 x 1 L
  • 6 x 1 L

Please contact us for further requests.

Structure resolution

AR-N 4400-10: 3 μm resolution at a film thickness of 15 μm

AR-N 4400-25: 5 µm trenches with a layer thickness of 40 µm

Spin curve

Spin curve for AR-N 4400-05 and AR-N 4400-10 (AR-N 4450-10/AR-N 4450-10T)

Spin curve of the AR-N 4400-25 and AR-N 4400-50

Resist structures

Turbine wheel from the AR-N 4400-10

Siemens star with the AR-N 4400-25 (30 µm thick)

Thermal stability and shrinking up to 300 °C

Developed lines with a width of 10 – 20 μm were hardened by flood exposure and subsequent bake step. These lines were tempered stepwise until 300 °C. Up to a temperature of 200 °C, structures remain more or less unchanged

Process parameters

  • Resist
    AR-N 4400-10
  • Substrate
    Si 4“ Wafer
  • Tempering
    95 °C, 10 min, hot plate
  • Exposure
    Maskaligner MJB 3, Kontaktbelichtung
  • Development
    AR 300-47, pur, 3 min, 22 °C

Sensitivity

The sensitivity increases constantly with increasing bake temperatures (broadband UV Maskeliner, thickness 5.0 μm)

Resolution

At a film thickness of 5 μm, 1.0 μm bars were produced

Gradation curve

The gradation (contrast) is 3.5, the sensitivity was determined to 21.5 mJ/cm2 for a structure buildup of 90 % (H090)

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