AR-N 4400-05 (CAR 44)
Thick negative resists for electroplating, microsystems technology and LIGA ≤ 20 μm
Characterisation
- i-, g-line, e-beam, X-ray, synchrotron, broadband UV
- chemically enhanced, very good adhesion, electro plating-stable
- very high sensitivity, easy removal
- profiles with high edge steepness for excellent resolution, covering of topologies
- for films up to 10 μm (250 rpm)
- novolac, crosslinking agent, amine-based acid generator
- safer solvent PGMEA
Properties
- Film thickness/1000 rpm (μm)5 µm
- Resolution (μm)1,0 µm
- Contrast4,0
- Flash point (°C)42 °C
- Storage 6 month (°C)10-18 °C
Available order sizes
- 1 x 100 ml (experimental sample)
- 1 x 250 ml
- 2 x 250 ml
- 1 x 1.000 ml
- 6 x 1.000 ml
- 1 x 2.500 ml
- 4 x 2.500 ml
Please contact us for further requests.
Suitable process chemicals
Spin curve
Thermal stability and shrinking up to 300 °C
Developed lines with a width of 10 – 20 μm were hardened by flood exposure and subsequent bake step. These lines were tempered stepwise until 300 °C. Up to a temperature of 200 °C, structures remain more or less unchanged.
Structure resolution
3 μm resolution at a film thickness of 15 μm
Process parameters
- ResistAR-N 4400-10
- SubstrateSi 4“ Wafer
- Tempering95 °C, 10 min, hot plate
- ExposureMaskaligner MJB 3, Kontaktbelichtung
- DevelopmentAR 300-47, pur, 3 min, 22 °C
Sensitivity
The sensitivity increases constantly with increasing bake temperatures (broadband UV Maskeliner, thickness 5.0 μm)
Time for complete development
At a film thickness of 5 μm, 1.0 μm bars were produced
Gradation curve
The gradation (contrast) is 3.5, the sensitivity was determined to 21.5 mJ/cm2 for a structure buildup of 90 % (H090).