Developed lines with a width of 10 – 20 μm were hardened by flood exposure and subsequent bake step. These lines were tempered stepwise until 300 °C. Up to a temperature of 200 °C, structures remain more or less unchanged.
3 μm resolution at a film thickness of 15 μm
Si 4“ Wafer
95 °C, 10 min, hot plate
Maskaligner MJB 3, Kontaktbelichtung
AR 300-47, pur, 3 min, 22 °C
The sensitivity increases constantly with increasing bake temperatures (broadband UV Maskeliner, thickness 5.0 μm)
Time for complete development
At a film thickness of 5 μm, 1.0 μm bars were produced
The gradation (contrast) is 3.5, the sensitivity was determined to 21.5 mJ/cm2 for a structure buildup of 90 % (H090).
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