Photoresist AR-N 4400-25 (CAR 44)
Thick negative resists for electroplating, microsystems technology and LIGA ≤ 20 μm
Characterisation
- i-, g-line, e-beam, X-ray, synchrotron, broadband UV
- chemically enhanced, very good adhesion, electro plating-stable
- very high sensitivity, easy removal
- profiles with high edge steepness for excellent resolution, covering of topologies
- for films up to 10 μm/ 20 μm (250 rpm)
- novolac, crosslinking agent, amine-based acid generator
- safer solvent PGMEA
Properties
- Film thickness/1000 rpm (μm)25 µm
- Resolution (μm)3,5 µm
- Contrast5,0
- Flash point (°C)42 °C
- Storage 6 month (°C)10-18 °C
Available order sizes
- 1 x 100 ml (experimental sample)
- 1 x 250 ml
- 1 x 1 L
- 6 x 1 L
Please contact us for further requests.
Suitable process chemicals
Spin curve
Resist structures
Siemens star produced with AR-N 4400-25 (30 μm thickness)
Structure resolution
3 μm resolution at a film thickness of 15 μm
Process parameters
- ResistAR-N 4400-10
- SubstrateSi 4“ Wafer
- Tempering95 °C, 10 min, hot plate
- ExposureMaskaligner MJB 3, Kontaktbelichtung
- DevelopmentAR 300-47, pur, 3 min, 22 °C