Photoresist AR-N 4400-50 (CAR 44)

Thick negative resists for electroplating, microsystems technology and LIGA ≥ 50 μm

Product information

Your request for this product

Characterisation

i-, g-line, e-beam, X-ray, synchrotron, broadband UV
chemically enhanced, very good adhesion, electro plating-stable
very high sensitivity, easy removal
profiles with high edge steepness for excellent resolution, covering of topologies
for highest film thicknesses up to 100 μm
novolac, crosslinking agent, amine-based acid generator
safer solvent PGMEA

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Properties

Film thickness/1000 rpm (μm)
50 µm
Resolution (μm)
5,0 µm
Contrast
6,0
Flash point (°C)
42 °C
Storage 6 month (°C)
10-18 °C

Available order sizes

1 x 100 ml (experimental sample)
1 x 250 ml
1 x 1 L
6 x 1 L

Please contact us for further requests.

Passende Prozesschemikalien

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-44

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-46

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-475

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Spin curve

Structure resolution

3 µm trenches at a film thickness of 15 µm

Process parameters

Resist
AR-N 4400-10
Substrate
Si 4“ Wafer
Tempering
95 °C, 10 min, hot plate
Exposure
Maskaligner MJB 3, Kontaktbelichtung
Development
AR 300-47, pur, 3 min, 22 °C

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