AR-P 3100 series
(AR-P 3110, AR-P 3120, AR-P 3170)
Adhesion-enhanced positive resists for the production of masks and fine scale divisions
Characterisation
- broadband UV, i-line, g-line
- high photosensitivity, high resolution
- strong adhesion to critical glass/chromium surfaces for extreme stresses during wet-chemical etching processes
- for the production of CD masters and lattice structures
- 3170 also suitable for laser interference lithography
- plasma etching resistant
- combination of novolac and naphthoquinone diazide
- Safer Solvent PGMEA
Properties
AR-P 3110
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Film thickness/4000 rpm: 1000 nm
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Resolution: 0.5 µm
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Contrast: 3
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Flash point: 46 °C
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Storage 6 month: 10-18 °C
AR-P 3120
AR-P 3170
* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond that without guarantee until the label date.
Available order sizes
- 1 x 100 ml (experimental sample)
- 1 x 250 ml
- 1 x 1 L
- 6 x 1 L
Suitable process chemicals
Structure resolution
AR-P 3120: Film thickness 0.6 μm Resist structures 0.38 μm L/S
Process parameters
- SubstrateSi 4“ Wafer
- Tempering95 °C, 90 s, hot plate
- Exposurei-line stepper (NA: 0,65)
- DevelopmentAR 300-47, 1 : 1, 60 s, 22 °C
Resist structures
AR-P 3170: 70-nm-lines generated by laser interference lithography