Film thickness 0.6 μm Resist structures 0.38 μm L/S
Si 4“ Wafer
95 °C, 90 s, hot plate
i-line stepper (NA: 0,65)
AR 300-47, 1 : 1, 60 s, 22 °C
Up to a structure width of 0.38, a very good agreement is obtained. REM measurement: Thickness 560 nm, i-line stepper (NA: 0.65 NA), Developer AR 300-47 1 : 1.
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