AR-P 3120
Adhesion-enhanced positive resists for the production of masks and fine scale divisions
Characterisation
- broadband UV, i-line, g-line
- high photosensitivity, high resolution
- strong adhesion to critical glass/chromium surfaces for extreme stresses during wet-chemical etching processes
- for the production of CD masters and lattice structures
- plasma etching resistant
- combination of novolac and naphthoquinone diazide
- Safer Solvent PGMEA
Properties
- Film thickness/ 4000 rpm (nm)550 nm
- Resolution (μm)0,4 µm
- Contrast3,0
- Flash point (°C)42 °C
- Storage 6 month (°C)10-18 °C
Available order sizes
- 1 x 100 ml (experimental sample)
- 1 x 250 ml
- 1 x 1 L
- 6 x 1 L
Please contact us for further requests.
Passende Prozesschemikalien
Structure resolution
Film thickness 0.6 μm Resist structures 0.38 μm L/S
Process parameters
- SubstrateSi 4“ Wafer
- Tempering95 °C, 90 s, hot plate
- Exposurei-line stepper (NA: 0,65)
- DevelopmentAR 300-47, 1 : 1, 60 s, 22 °C
Spin curve
Linearity
Up to a structure width of 0.38, a very good agreement is obtained. REM measurement: Thickness 560 nm, i-line stepper (NA: 0.65 NA), Developer AR 300-47 1 : 1.