AR-P 3210

Thick positive resists for electroplating and microsystems technology

Product information

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Characterisation

broadband UV, i-line, g-line
high photosensitivity, high resolution
profiles with high edge steepness dimens. accuracy
plasma etch resistant, electroplating-stable
for film thicknesses up to 40 μm/
combination of novolac and naphthoquinone diazide
Safer Solvent PGMEA

Interesting Resist Wiki articles

Properties

Film thickness/ 4000 rpm (μm)
10 µm
Resolution (μm)
4,0 µm
Contrast
2,0
Flash point (°C)
42 °C
Storage 6 month (°C)
10-18 °C

Available order sizes

Product on request

Please contact us for further requests.

Suitable process chemicals

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution

Film thickness 12 μm Resist structures 4 μm

Process parameters

Substrate
Si 4“ Wafer
Tempering
95 °C, 10-15 min, hot plate
Exposure
Maskaligner MJB 3, Kontaktbelichtung
Development
AR 300-26, 1 : 3, 3 min, 22 °C

Spin curve