AR-P 3210
Thick positive resists for electroplating and microsystems technology
Please contact us for further requests.
Characterisation
- broadband UV, i-line, g-line
- high photosensitivity, high resolution
- profiles with high edge steepness dimens. accuracy
- plasma etch resistant, electroplating-stable
- for film thicknesses up to 40 μm/
- combination of novolac and naphthoquinone diazide
- Safer Solvent PGMEA
Interesting Resist Wiki articles
Properties
- Film thickness/ 4000 rpm (μm)10 µm
- Resolution (μm)4,0 µm
- Contrast2,0
- Flash point (°C)42 °C
- Storage 6 month (°C)10-18 °C
Available order sizes
- 1 x 100 ml (experimental sample)
- 1 x 250 ml
- 2 x 250 ml
- 1 x 1.000 ml
- 6 x 1.000 ml
- 1 x 2.500 ml
- 4 x 2.500 ml
Suitable process chemicals
Structure resolution
Film thickness 12 μm Resist structures 4 μm
Process parameters
- SubstrateSi 4“ Wafer
- Tempering95 °C, 10-15 min, hot plate
- ExposureMaskaligner MJB 3, Kontaktbelichtung
- DevelopmentAR 300-26, 1 : 3, 3 min, 22 °C
Spin curve
