AR-P 3220

Thick positive resists for electroplating and microsystems technology

Product information

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Characterisation

broadband UV, i-line, g-line
high photosensitivity, high resolution
profiles with high edge steepness dimens. accuracy
plasma etch resistant, electroplating-stable
transparent for thick films up to 100 μm in multiple coating steps, 100 μm development in one step
combination of novolac and naphthoquinone diazide
Safer Solvent PGMEA

Interesting Resist Wiki articles

Properties

Film thickness/ 4000 rpm (μm)
10 µm
Resolution (μm)
3,0 µm
Contrast
3,0
Flash point (°C)
42 °C
Storage 6 month (°C)
10-18 °C

Available order sizes

Product on request

Please contact us for further requests.

Suitable process chemicals

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Strukturauflösung

Film thickness 12 μm Resist structures 4 μm

Process parameters

Substrate
Si 4“ Wafer
Tempering
95 °C, 10-15 min, hot plate
Exposure
Maskaligner MJB 3, Kontaktbelichtung
Development
AR 300-26, 1 : 3, 3 min, 22 °C

Spin curve

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