AR-P 3200 series
(AR-P 3210, AR-P 3220, AR-P 3250(T)
Thick positive resists for electroplating and microsystems technology
Characterisation
- broadband UV, i-line, g-line
- high photosensitivity, high resolution
- profiles with high edge steepness dimens. accuracy
- plasma etch resistant, electroplating-stable
- AR-P 3210/AR-P 3250 for film thicknesses up to 40 μm / 20 μm
- AR-P 3220 transparent for thick films up to 100μm in multiple coating steps, 100 μm development in one step
- combination of novolac and naphthoquinone diazide
- safer solvent PGMEA
Interesting Resist Wiki articles
Properties
AR-P 3210
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Layer thickness/4.000 rpm: 10 µm
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Resolution: 4.0 µm
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Contrast: 2.0
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Flash point: 46 °C
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Storage: 10-18 °C
AR-P 3220
AR-P 3250(T)
* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond this without guarantee until the label date.
Available order sizes for AR-P 3250
(AR-P 3210, AR-P 3220, AR-P 3250 T on request)
- 1 x 100 ml (experimental sample)
- 1 x 250 ml
- 1 x 1 L
- 6 x 1 L
Suitable process chemicals
Structure resolution
AR-P 3210: Film thickness of 12 μm, resist structures of 4 μm
Spin curve
Spin curves of the AR-P 3210, AR-P 3220, AR-P 3250(T).
Resist structures
AR-P 3220: Layer thickness of 25 µm
Grey tone mask lithography
AR-P 3220: 28 μm-high 3D pyramids
Process parameters
- SubstrateSi 4“ Wafer
- Tempering95 °C, 10-15 min, hot plate
- ExposureMaskaligner MJB 3, Kontaktbelichtung
- DevelopmentAR 300-26, 1 : 3, 3 min, 22 °C