AR-P 3510 T

Sensitive positive-tone standard resists for the production of integrated circuits

Product information

Your request for this product

Characterisation

broadband UV, i-line, g-line
high photosensitivity, high resolution
very good adhesion properties
3500 T: robust processing, suitable for TMAH developer 0.26 n
plasma etching resistant, temperature-stable up to 120 °C
combination of novolac and naphthoquinone diazide
Safer Solvent PGMEA

Interesting Resist Wiki articles

Properties

Film thickness / 4000 rpm (μm)
2,0 µm
Resolution (μm)
0,6 µm
Contrast
4,5
Flash point (°C)
42 °C
Storage 6 month (°C)
10-18 °C

Available order sizes

1 x 100 ml (experimental sample)
1 x 250 ml
1 x 1 L
6 x 1 L

Please contact us for further requests.

Suitable process chemicals

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-35

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-44

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution

Film thickness 1.5 μm Resist structures 0.5 μm

Process parameters

Substrate
Si 4“ Wafer
Tempering
95 °C, 90 s, hot plate
Exposure
g-line stepper (NA: 0,56)
Development
AR 300-44, 60 s, 22 °C

Spin curve