AR-P 5350

Sensitive positive-tone resists for the production of evaporation samples

Product information

Your request for this product

Characterisation

broadband UV, i-line, g-line
high photosensitivity, high resolution
good adhesion properties
for undercut structures for the production of evaporation samples, in particular of metal using lift-off techniques e.g. for conductor paths
plasma etching resistant, temperature stable up to 120 °C
combination of novolac and naphthoquinone diazide
safer solvent PGMEA

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Properties

Film thickness/ 4000 rpm (μm)
1,0 µm
Resolution (μm)
0,5 µm
Contrast
5,0
Flash point (°C)
42 °C
Storage 6 month (°C)
10-18 °C

Available order sizes

1 x 100 ml (experimental sample)
1 x 250 ml
1 x 1 L
6 x 1 L

Please contact us for further requests.

Suitable process chemicals

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-35

For the development of photoresists and novolac-based e-beam resist films

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Resist structures

Lift-off resist structure after metal evaporation

Process parameters

Substrat
Si 4“ Wafer
Tempering
105 °C, 4 min, hot plate
Exposure
g-line stepper (NA: 0,56)
Development
AR 300-35, 1 : 2, 60 s, 22 °C

Spin curve

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