AR-P 5910
Adhesion-enhanced positive-tone resist for complicated patternings with HF etching mixtures
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Characterisation
- broadband UV, i-line, g-line
- highly enhanced adhesion, retarded diffusion of hydrofluoric acid in BOE-mixture 5 : 1 (> 1 h)
- stable against 5 % hydrofluoric acid (> 15 min)
- plasma etching resistant up to 120 °C
- combination of novolac and naphthoquinone diazide, crosslinking agent, adhesion promoter; safer solvent PGMEA
Interesting Resist Wiki articles
Properties
- Film thickness/4000 rpm (μm)5 µm
- Resolution (μm)2,0 µm
- Flash point (°C)42 °C
- Storage 6 month (°C)10 - 18 °C
Available order sizes
- 1 x 100 ml (experimental sample)
- 1 x 250 ml
- 2 x 250 ml
- 1 x 1.000 ml
- 6 x 1.000 ml
- 1 x 2.500 ml
- 4 x 2.500 ml
Suitable process chemicals
Structure resolution
3 μm-bars at a film thickness of 5 μm
Process parameters
- SubstrateSi 4" Wafer
- Tempering90 °C, 2 min, hot plate
- ExposureMaskaligner MJB 3, Kontaktbelichtung
- DevelopmentAR 300-26 pur, 90 s, 22 °C
Spin curve
