AR-U 4040

Image reversal resist for the fabrication of integrated circuits

Product information

Your request for this product

Characterisation

bb UV, i-line, g-line, neg exposure up to 450 nm
high photosensitivity, high resolution
depending on the processing protocol, pos. or neg. image with structures in the sub-μm range
positive working without additional process steps
high contrast in the negative mode, pronounced undercut profiles are possible (lift-off)
combination of novolac and bisazide
safer solvent PGMEA

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Properties

Film thickness/4000 rpm (μm)
1,4 µm
Resolution (μm)
0,7 µm
Contrast
3,0
Flash point (°C)
42 °C
Storage 6 month (°C)
8-12 °C

Available order sizes

1 x 100 ml (experimental sample)
1 x 250 ml
2 x 250 ml
1 x 1.000 ml
6 x 1.000 ml
1 x 2.500 ml
4 x 2.500 ml

Please contact us for further requests.

Suitable process chemicals

Adhesion Promoter AR 300-80 new

For improving the adhesive strength of photo and e-beam resists

Bottom Resist AR-BR 5460

Positive or negative system for optically transparent and thermally resistant structures

Bottom Resist AR-BR 5480

Positive or negative system for optically transparent and thermally resistant structures

Developer AR 300-26

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-35

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-44

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-46

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-47

For the development of photoresists and novolac-based e-beam resist films

Developer AR 300-475

For the development of photoresists and novolac-based e-beam resist films

Developer AR 600-50

For the development of e-beam resists films

Developer AR 600-51

For the development of e-beam resists films

Developer AR 600-546

For the development of e-beam resists films

Developer AR 600-548

For the development of e-beam resists films

Developer AR 600-549

For the development of e-beam resists films

Developer AR 600-55

For the development of e-beam resists films

Developer AR 600-56

For the development of e-beam resists films

E-Beam Resist AR-N 7500 series

High resolution, process-stable (no CAR) resist for mix & match-processes, temperature stable up to 120 °C

E-Beam Resist AR-N 7520 new series

Highest resolution and highly sensitive resist for mix & match, thermostable up to 140 °C

E-Beam Resist AR-N 7520 series

High resolution resist for mix & match-processes, for high-precision edges, thermo-stable up to 140 °C

E-Beam Resist AR-N 7700 series

High-resolution e-beam resists for the production of integrated circuits

E-Beam Resist AR-N 7720 series

AR-N 7720 e-beam resists with flat gradation High-resolution e-beam resists for the production of diffractive optics

E-Beam Resist AR-N 8200 series (Medusa 82)

Experimental sample/custom-made product

E-Beam Resist AR-N 8250 series (Medusa 82)

Experimental sample/custom-made product

E-Beam Resist AR-P 617 series

Resists for nanometer lithography, highest resolution, Copolymer 33% MA, Solvent: methoxypropanol

E-Beam Resist AR-P 6200 series (CSAR 62)

High-contrast e-beam resists for the production of integrated circuits and masks

E-Beam Resist AR-P 631 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 632 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 639 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 641 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 642 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 649 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 6510 series

Thick positive resists for the production of microcomponents

E-Beam Resist AR-P 661 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 662 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 669 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 671 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 672 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 679 series

PMMA resist series 50K – 950K for the production of integrated circuits and masks

E-Beam Resist AR-P 7400 series

Plasma etching resistant e-beam resists for the production of integrated circuits and masks

E-Beam Resist AR-P 8100 series (Phoenix 81)

High-contrast, thermolabile resist for integrated circuits and holographic structures

E-Beam Resist X AR-N 7700/30

Chemically enhanced e-beam resist with very high sensitivity

HMDS adhesion promoter

For improving the adhesive strength of photo and e-beam resists

Photoresist AR-N 2210

Ready-to-use positive and negative spray resists for various applications

Photoresist AR-N 2220

Ready-to-use positive and negative spray resists for various applications

Photoresist AR-N 2230

Ready-to-use positive and negative spray resists for various applications

Photoresist AR-N 4340

Highly sensitive negative resist for the production of integrated circuits

Photoresist AR-N 4400-05 (CAR 44)

Thick negative resists for electroplating, microsystems technology and LIGA ≤ 20 μm

Photoresist AR-N 4400-10 (CAR 44)

Thick negative resists for electroplating, microsystems technology and LIGA ≤ 20 μm

Photoresist AR-N 4400-25 (CAR 44)

Thick negative resists for electroplating, microsystems technology and LIGA ≥ 50 μm

Photoresist AR-N 4400-50 (CAR 44)

Thick negative resists for electroplating, microsystems technology and LIGA ≥ 50 μm

Photoresist AR-N 4450-10 T (CAR 44)

Thick negative resists for electroplating, microsystems technology and LIGA ≥ 50 μm

Photoresist AR-N 4600 series (Atlas 46)

Thick negative resists for electroplating, microsystems technologies and LIGA < 20 μm

Photoresist AR-P 1210

Ready-to-use positive and negative spray resists for various applications

Photoresist AR-P 1220

Ready-to-use positive and negative spray resists for various applications

Photoresist AR-P 1230

Ready-to-use positive and negative spray resists for various applications

Photoresist AR-P 3110

Adhesion-enhanced positive resists for the production of masks and fine scale divisions

Photoresist AR-P 3120

Adhesion-enhanced positive resists for the production of masks and fine scale divisions

Photoresist AR-P 3170

Adhesion-enhanced positive resists for the production of masks and fine scale divisions

Photoresist AR-P 3210

Thick positive resists for electroplating and microsystems technology

Photoresist AR-P 3220

Thick positive resists for electroplating and microsystems technology

Photoresist AR-P 3250

Thick positive resists for electroplating and microsystems technology

Photoresist AR-P 3510

Sensitive positive-tone standard resists for the production of integrated circuits

Photoresist AR-P 3510 T

Sensitive positive-tone standard resists for the production of integrated circuits

Photoresist AR-P 3540

Sensitive positive-tone standard resists for the production of integrated circuits

Photoresist AR-P 3540 T

Sensitive positive-tone standard resists for the production of integrated circuits

Photoresist AR-P 3740

Sensitive positive-tone standard resists for the production of highly integrated circuits

Photoresist AR-P 3840

Sensitive positive-tone standard resists for the production of highly integrated circuits

Photoresist AR-P 5320

Sensitive positive-tone resists for the production of evaporation samples

Photoresist AR-P 5350

Sensitive positive-tone resists for the production of evaporation samples

Photoresist AR-P 5910

Adhesion-enhanced positive-tone resist for complicated patternings with HF etching mixtures

Photoresist AR-U 4030

Image reversal resist for the fabrication of integrated circuits

Photoresist AR-U 4040

Image reversal resist for the fabrication of integrated circuits

Photoresist AR-U 4060

Image reversal resist for the fabrication of integrated circuits

Photoresist SX AR-P 3500/8

Positive photoresist for high-temperature application up to 300 °C

Photoresist X AR-P 3220/7

Thick temperature-stable positive photoresist Experimental sample/custom-made product

Photoresist X AR-P 5900/4

Experimental sample/custom-made product

Protective Coating AR-PC 503

Wafer backside protection during front side etchings for the production of deep structures in silicon

Protective Coating AR-PC 5040

Wafer backside protection during front side etchings for the production of deep structures in silicon

Protective Coating SX AR-PC 5000/41

KOH and HF resistant protective coating for wafer backside protection

Protective Coatings AR-PC 504

Wafer backside protection during front side etchings for the production of deep structures in silicon

Remover AR 300-72

For the stripping of tempered photoresist and e-beam resist films

Remover AR 300-73

For the stripping of tempered photoresist and e-beam resist films

Remover AR 300-76

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-70

For the stripping of tempered photoresist and e-beam resist films

Remover AR 600-71

For the stripping of tempered photoresist and e-beam resist films

Stopper AR 600-60

For the stopping of e-beam resist film development with solvents

Stopper AR 600-61

For the stopping of e-beam resist film development with solvents

Thinner AR 300-12

For adjusting the film thickness of photoresists and e-beam resists

Thinner AR 600-01

For adjusting the film thickness of photoresists and e-beam resists

Thinner AR 600-02

For adjusting the film thickness of photoresists and e-beam resists

Thinner AR 600-07

For adjusting the film thickness of photoresists and e-beam resists

Thinner AR 600-09

For adjusting the film thickness of photoresists and e-beam resists

Structure resolution

1.0 μm positive structures at a film thickness of 1.4 μm

Process parameters

Substrate
Si 4“ Wafer
Tempering
90 °C, 1 min, hot plate
Exposure
g-line stepper (NA: 0,56)
Development
AR 300-35, 1 : 1, 60 s, 22 °C

Spin curve

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