X AR-P 3220/7

Thick temperature-stable positive photoresist

(Experimental sample/custom-made product)

Product information

Your request for this product

Characterisation

broadband, i-line, g-line
high photosensitivity, good resolution
very plasma etching stable, thermally stable up to 130 °C
12 μm with single spin coating step (1000 rpm) possible
combination of novolac and naphthoquinone diazide
Safer Solvent PGMEA

Interesting Resist Wiki articles

Properties

Film thickness/4000 rpm (μm)
6 µm
Resolution (μm)
1,5 µm
Contrast
4,0
Flash point (°C)
42 °C
Storage 6 month (°C)
10-18 °C

Available order sizes

1 x 30 ml
1 x 100 ml
1 x 250 ml
2 x 250 ml
1 x 1.000 ml
6 x 1.000 ml

Please contact us for further requests.

Suitable process chemicals

E-Beam Resist AR-N 7500 series

High resolution, process-stable (no CAR) resist for mix & match-processes, temperature stable up to 120 °C

E-Beam Resist AR-N 7520 new series

Highest resolution and highly sensitive resist for mix & match, thermostable up to 140 °C

E-Beam Resist AR-N 7520 series

High resolution resist for mix & match-processes, for high-precision edges, thermo-stable up to 140 °C

E-Beam Resist AR-N 7700 series

High-resolution e-beam resists for the production of integrated circuits

E-Beam Resist AR-N 7720 series

AR-N 7720 e-beam resists with flat gradation High-resolution e-beam resists for the production of diffractive optics

E-Beam Resist AR-P 6510 series

Thick positive resists for the production of microcomponents

E-Beam Resist AR-P 7400 series

Plasma etching resistant e-beam resists for the production of integrated circuits and masks

Photoresist AR-N 4340

Highly sensitive negative resist for the production of integrated circuits

Photoresist AR-N 4400-05 (CAR 44)

Thick negative resists for electroplating, microsystems technology and LIGA ≤ 20 μm

Photoresist AR-N 4400-10 (CAR 44)

Thick negative resists for electroplating, microsystems technology and LIGA ≤ 20 μm

Photoresist AR-N 4400-25 (CAR 44)

Thick negative resists for electroplating, microsystems technology and LIGA ≥ 50 μm

Photoresist AR-N 4400-50 (CAR 44)

Thick negative resists for electroplating, microsystems technology and LIGA ≥ 50 μm

Photoresist AR-N 4450-10 T (CAR 44)

Thick negative resists for electroplating, microsystems technology and LIGA ≥ 50 μm

Photoresist AR-N 4600 series (Atlas 46)

Thick negative resists for electroplating, microsystems technologies and LIGA < 20 μm

Photoresist AR-P 3110

Adhesion-enhanced positive resists for the production of masks and fine scale divisions

Photoresist AR-P 3120

Adhesion-enhanced positive resists for the production of masks and fine scale divisions

Photoresist AR-P 3170

Adhesion-enhanced positive resists for the production of masks and fine scale divisions

Photoresist AR-P 3210

Thick positive resists for electroplating and microsystems technology

Photoresist AR-P 3220

Thick positive resists for electroplating and microsystems technology

Photoresist AR-P 3250

Thick positive resists for electroplating and microsystems technology

Photoresist AR-P 3510

Sensitive positive-tone standard resists for the production of integrated circuits

Photoresist AR-P 3510 T

Sensitive positive-tone standard resists for the production of integrated circuits

Photoresist AR-P 3540

Sensitive positive-tone standard resists for the production of integrated circuits

Photoresist AR-P 3540 T

Sensitive positive-tone standard resists for the production of integrated circuits

Photoresist AR-P 3740

Sensitive positive-tone standard resists for the production of highly integrated circuits

Photoresist AR-P 3840

Sensitive positive-tone standard resists for the production of highly integrated circuits

Photoresist AR-P 5320

Sensitive positive-tone resists for the production of evaporation samples

Photoresist AR-P 5350

Sensitive positive-tone resists for the production of evaporation samples

Photoresist AR-P 5910

Adhesion-enhanced positive-tone resist for complicated patternings with HF etching mixtures

Photoresist AR-U 4030

Image reversal resist for the fabrication of integrated circuits

Photoresist AR-U 4040

Image reversal resist for the fabrication of integrated circuits

Photoresist AR-U 4060

Image reversal resist for the fabrication of integrated circuits

Photoresist SX AR-P 3500/8

Positive photoresist for high-temperature application up to 300 °C

Photoresist X AR-P 3220/7

Thick temperature-stable positive photoresist Experimental sample/custom-made product

Photoresist X AR-P 5900/4

Experimental sample/custom-made product

Protective Coating AR-PC 503

Wafer backside protection during front side etchings for the production of deep structures in silicon

Protective Coating AR-PC 5040

Wafer backside protection during front side etchings for the production of deep structures in silicon

Protective Coatings AR-PC 504

Wafer backside protection during front side etchings for the production of deep structures in silicon

Structure resolution

X AR-P 3220/7 3 μm bars at a film thickness of 10 μm

Process parameters

Substrate
Si 4“ Wafer
Tempering
95 °C, 180 s, hot plate
Exposure
g-line stepper (NA: 0,56)
Development
AR 300-26, 1 : 2, 120 s, 22 °C

Spin curve

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