Protective Coating AR-PC 5090.02 (Electra 92)
Conductive protective coating for non-novolak-based e-beam resists
Top layer for the dissipation of e-beam charges on insulating substrates
Conductive protective coating for non-novolak-based e-beam resists
Top layer for the dissipation of e-beam charges on insulating substrates
200 nm-squares written on quartz without distortion caused by charges with AR-P 662.04 and AR-PC 5090.02
After a few hours of air humidity absorption under room conditions, the conductivity decreases again to the initial value. In the high vacuum the conductivity thus increases accordingly. This effect has been demonstrated in direct conductivity measurements under mediate vacuum conditions. Temperatures above 165 °C destroy the polyaniline irreversibly and no conductivity is observed any more.
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Abb.: 30 – 150 nm Quadrate des CSAR 62 auf Glas
Die Kombination von CSAR 62 mit AR-PC 5090.02 bietet beste Möglichkeiten, komplizierte E-Beam-Strukturierungen auf Glas, Quarz oder semiisolierenden Substraten wie z.B. Galliumarsenid durchzuführen. Die sehr gute Empfindlichkeit und höchste Auflösung des CSAR werden durch die Leitfähigkeit des Electra harmonisch ergänzt.
200 nm squares produced with 2-layer PMMA lift-off
Initially, the PMMA resist AR-P 669.04 (200 nm thickness) was coated on a quartz substrate and tempered. The second PMMA resist AR-P 679.03 was then applied (150 nm thickness) and tempered, followed by coating with Electra 92. After exposure, Electra 92 was removed with water, the PMMA structures were developed (AR 600-56) and the substrate vaporised with titanium/gold. After a liftoff with acetone, the desired squares remained on the glass
with high precision.
20 nm bars of HSQ, prepared on quartz AR-PC 5090.02
After a coating of Electra 92 on an HSQ resist, even this resist can be patterned on a quartz substrate with very high quality. The HSQ resist (20 nm thickness) was irradiated with the required area dose of 4300 μC/cm². SX AR-PC 5000/90.2 was subsequently completely removed within 2 minutes with warm water and no residues could be detected. After development of the HSQ resist, the structures with high-precision 20 nm bars remained.