Protective Coating SX AR-PC 5000/41
(Experimental sample/custom-made product)
KOH and HF resistant protective coating for wafer backside protection
Characterisation
- not light-sensitive > 300 nm, no yellow light required
- stable protective film for protecting the wafer backside during etching of the front up to 80 °C, e.g. with 40 % caustic potash, 50 % hydrofluoric acid, BOE
- in two-layer system structurable with AR-P 3250 or AR-N 4400-05/10; plasma etching resistant
- high-melting modified hydrocarbons
- solvent ethylbenzene
Interesting Resist Wiki articles
Properties
- Viscosity 25°C50 mPas
- Film thickness/4.000 rpm5,0 µm
- Resolution (2-Layer)20 µm
- Contrast (2-Layer)1
- Flash point15 °C
- Storage 6 month15 - 22 °C
* The products have a guaranteed shelf life of 6 months from the date of sale when stored according to instructions and can be used beyond that without guarantee until the label date.
Available order sizes
- 1 x 100 ml
- 1 x 250 ml
- 1 x 1 L
- 6 x 1 L
Please contact us for further requests.
Suitable process chemicals
Resist structures
Two-layer structuring with SX AR-PC 5000/41 and AR-P 3250 (on the left resist mask, on the right after etching in glass)
5 μm thick layer with glass wafer provided by the IDM
Spin curve
Processing instructions
Coating:
A spin speed of 1000 rpm is recommended, since wafer edges are optimally protected due to the slight wrapping effect at a film thickness of approx. 10 μm during spin deposition.
Etch process:
The protective layer is not attacked over hours. Note: The protective film is not dissolved in acetone or isopropanol. For removal or cleaning of equipment, the respective thinner has to be used.