Produktentwicklungen
Cases von Papa schreiben lassen
1. What are e-beam resists composed of, and how do they work?
1. What are photoresists composed of, and how do they work?
10. How high is the etch resistance of e-beam resists in the presence of strong acids?
10. Which developers are optimal for photoresist, and how do factors like developer concentration and temperature influence the result?
11. How can resist coatings be removed again?
11. How high is the solvent resistance of e-beam resist films?
12. What is the application range of protective coatings?
13. How do image reversal resists work?
14. How can undercut patterns (lift-off structures) be produced in one- or two layer systems?
15. How can thick films of > 10 µm be processed in an optimal way?
16. Which resolution and which contrast can be obtained with photoresists?
17. How high is the plasma etch resistance of photoresists?
18. How high is the etch resistance of photoresist in the presence of strong acids?
19. Which photoresists are suitable for hydrofluoric acid (HF) etching?
2. For how long are e-beam resists stable, and what are the optimal storage conditions?
2. For how long are photoresists stable, and what are the optimal storage conditions?
20. How high is the solvent resistance of photoresist films?
24nd issue of the AR NEWS
25 years of Allresist – A reason to celebrate!
25th issue of the AR NEWS
26th issue of the AR NEWS
27th issue of the AR NEWS
28th Issue of the AR NEWS
29th issue of the AR NEWS
2L-Lift-off system AR-P 617 – AR-P 8100
3. How may age-related changes influence the quality of a photoresist?
3. What is the optimal pre-treatment of substrates for e-beam resist application?
30 years Allresist
30th issue of the AR NEWS
31st issue of the AR NEWS
32nd issue of the AR NEWS
33rd issue of the AR NEWS
34th issue of the AR NEWS
35th special issue of the AR NEWS
36th Issue of the AR NEWS
37th issue of the AR NEWS
38th Issue of the AR NEWS
39th Issue of the AR NEWS
4. How high is the adhesion strength of e-beam resists to different wafers?
4.What is the optimal pre-treatment of substrates for photoresists?
40th issue of the AR NEWS
41st issue of the AR NEWS
42nd Issue of the AR NEWS
43rd Issue of the AR NEWS
44th Issue of the AR NEWS
45th Issue of the AR NEWS
46th Issue of the AR NEWS
47th Issue of the AR NEWS
48th Issue of the AR NEWS
49th Issue of the AR NEWS
5. How are e-beam resists exposed? How can the optimum exposure dose be determined?
5. What are the adhesion features of photoresists on different wafers?
50th Issue of the AR NEWS
51st Issue of the AR NEWS
52nd Issue of the AR NEWS
6. What are the optimum coating parameters for photoresists in order to achieve good film images?
6. Which developers are optimal for e-beam resists, and how do factors like developer concentration and temperature influence the result?
7. How can e-beam resist films be removed again?
7. Why may air bubbles develop in photoresist films, and how can they be avoided?
8. What is the function of the softbake of photoresist films after the coating?
8. Which resolutions do e-beam resists achieve?
9. How are photo resists exposed, and how can the optimum exposure dose be determined? How long can coated and exposed substrates be stored prior to exposure?
9. How high is the plasma etch resistance of e-beam resists?
Adaptable two-layer resist AR-BR 5460 for variable lift-off structures
Additional new experimental developers for AR-P 617
Adhesion promoter HMDS and diphenylsilanediol (AR 300-80)
Adhesive strength
Adhesive strength of AR 300-80
Ageing of developer
Alkali-stable and solvent-stable negative resist
Alkali-stable positive resist obtained after treatment with HMDS
Alkali-stable, easily structurable positive resist SX AR-P 5900/8
Alkaline developers for aluminium substrates
Allresist at the EIPBN 2018 Conference in Puerto Rico
Allresist auf der MNE und Semicon
Allresist now offers many solvents in lightweight HDPE bottles
Allresist presents Medusa 82 at the MNE 2019 in Rhodes
Allresist supports Ukraine
Allresists neue Produktentwicklungen in den Startlöchern
Alternatives for NMP-based removers
Aluminium structures developed directly
April 2019: Phoenix 81
April 2021: CSAR 62 – In demand around the world
April 2022: New environmentally friendly developer for PMMA resists AR 600-57
April 2023: E-beam PMMA resist AR-P 672.045 – the workhorse for electron beam lithography
April 2025: New environmentally friendly remover AR 300-77
Aqueous negative resist based on gelatine
Aqueous-alkaline removers
AR-N 7700, 4 µm thick, proximity effect
AR-P 617 Two layer lift-off system
Atlas 46 for e-beam lithography
Atlas 46 for nanoimprint lithography
ATLAS 46 in general
Australia – Micro Materials Pty Ltd
Basics
Black resist
Black-Protect – stable protective coating for HF and KOH etchings
Bleachable resists
BOE etching of SiO2 with CSAR 62 mask
Brandenburger Innovationsfachkräfte
Brandenburgs Wirtschaftsminister Albrecht Gerber bei Allresist zu Besuch – Photovoltaikanlage verbessert Ökobilanz 2015
CAR 44 for e-beam lithography
CAR 44 on copper
Chemical dry etching
Chemically amplified, highly sensitive negative e-beam resist SX AR-N 7730/37
Chemically enhanced negative resist (Process parameters and resolution)
Chemically enhanced negative resist without cross-linking
China – GermanTech Co. Ltd.
Collapse of extreme high-resolution e-beam resist structures
Coloured negative photoresists
Composition of photoresists
Conductivity under the application conditions of e-beam lithography
Cross linker
CSAR 62 Avoidance of particles during large-area exposures
CSAR 62 for EUV applications
CSAR 62 for thick films
CSAR 62 lift-off for thick layers
CSAR 62 nanostructures written at 100 kV
CSAR 62 single layer lift-off system
CSAR 62 thick layers
CSAR 62 – Development at low temperatures
CSAR 62 – Experimental studies on new, sensitive developers
CSAR 62 – Mechanism of action
CSAR structures on glass
Customer information Corona virus
Customer letter about our further development of high-tech resists Medusa, Electra and Phoenix
Determining the conductivity of Electra 92 layers on glass
Developer AR 300-35 for alkali-sensitive substrates
Developer for CSAR 62 (AR-P 6200)
Development cascade
Development of thick negative resist layer
Development procedures
Diffractive optics with the “analogous“ e-beam resist
Dilution of resists
Donation for completed customer surveys
Dose-dependent structure size with negative resists
E-Beam Resist
E-beam resist: Procedures
E-beam resists: General
Einweihung des neuen 450 m² großen Anbaues zum 26. Firmenjubiläum
Electra 92 variant optimised for applications on novolac-based resists
Electron beam lithography systems
Electron beam resists
Ethanol and toluene-resistant photoresist AR-U 4060
Eurostar-Projekt: PPA-Litho
Eurostar-Projekt: PPA-Litho
Evaluation of various developers for e-beam exposed CSAR 62 layers (100 kV)
Evaluation of various developers for e-beam exposed CSAR 62 layers (100 kV)
Exposure
Extension of the production facilities
Fabrication of vertical flanks with CAR 44
Fachartikel im Magazin für Oberflächentechnik
Fachartikel in der Nanotechnologie (CSAR 62)
Fachartikel in der Nanotechnologie (Electra 92)
Fluorescent resist structures
Fluorescent resist structures with photoresists
Forays through the lithography of microelectronics (Matthias Schirmer)
Förderung unternehmensWert:Mensch
Forschungsprojekte
General: Resist composition
Generation of secondary electrons
Generation of undercut structures with negative resists
Great success with Medusa 82 at the MNE
HF etching of GaAs with CSAR 62 masks
High resolution on quartz with Electra 92 on HSQ resists
High-resolution negative e-beam resist
High-resolution negative e-beam resist AR-N 7520.17new for etching application
High-resolution PMMA one layer resist
Highly sensitive e-beam resist AR-P 617 (PMMA-copolymer)
Important information about deliveries between years
Important information about deliveries between years 2024 / 2025
Improved protective coating SX AR-PC 5000/31
India – INFRARED OPTICS PVT. LTD.
Innovative new development at the MNE 2017
Interference lithography
January 2020: Black resist SX AR-N 8355/7
January 2021: Optimised process for negative photoresist Atlas 46
January 2022: Versatile Phoenix 81 (AR-P 8100)
January 2023: Standard resist AR-P 3510 – 30 years on the world market
January 2024: Electra 92 established on the market – AR-PC 5092.02
January 2025: Electra 94 with extended shelf life – AR-PC 5094.02
Japan – Quantum Design Japan, Inc.
July 2020: Bottom resist AR-BR 5400, the “workhorse” for two-layer processes
July 2021: CAR 44 for galvanic molding
July 2022: Our resist triplet of the month – presented at the Triple-Beam (EIPBN 2022)
July 2024: Medusa 84 AR-N 8400 SiH, the improved HSQ alternative, in market launch
Laser ablation of PPA (Phoenix 81)
Laser direct exposure with AR-P 3540
Lift off (one layer – two layer)
Loading
Long-term stability of Electra 92
Manufacture of plasmonic nanostructures with CSAR 62
Manufacture of undercut structures for T-gates in three-layer processes
Medusa 82 for EUV applications
Medusa 82 with photoacid generator (PAG)
Medusa 82 – the alternative to HSQ-resists, storage stability
Medusa 82: Influence of post exposure bake (PEB)
Negative CAR PMMA resist SX AR-N 4810/1
Negative poly(hydroxystyrene) and (hydroxystyrene-co-MMA) photoresist with high-temperature stability
Negative polyimide photoresist
Negative two- layer lift-off system
New AR 300-80 and contact angle measurement
New developer for AR-P 5320
New developers for AR-P 617
New developers for PMMAcoMA (AR-P 617, 50 kV)
New procedure for the spray coating of deep topologies with SX AR-P 1250/20
New safer solvent remover AR 300-76
New solvent remover
NIR-laser structurable photoresists
October 2021: More efficient production of Electra 92
October 2022: Optimised Electra 92 – a new AR-PC 5092
October 2023: Medusa 84 SiH – SX AR-N 8400 another alternative to HSQ
October 2024: Worldwide interest in Medusa 84 – AR-N 8400 SiH
October 2025: Medusa 84 – the reliable alternative to HSQ resist
Oktober 2019: Medusa 82 UV
One-layer and two-layer lift-off
Order of Merit of the State of Brandenburg for Brigitte and Matthias Schirmer
Other resist components
Patterning of the conductive protective coating Electra 92
Phoenix 81 – Storage conditions and dispatch
Photoresist coatings on Teflon substrates
Photosensitive components
PMMA e-beam resist with flat gradation for three-dimensional structures
PMMA e-beam resist, positive and negative in the case of overexposure, suitable for bridge structures
PMMA lift-off structures on semi-precious stone substrates using Electra 92
PMMA protective coating: reduction of cotton candy effect
Poly(phthalaldehyde)-based electron beam resists
Poly(phthalaldehyde)-based electron beam resists, University of Tübingen
Polyimide two-layer systems
Polymers (film formers)
Positive polyimide one-layer resist
Positive polyimide resist for e-beam-lithography
Positive resist for temperature sensitive substrates
Positive two- layer lift-off system
PPA for two layer applications
Principle and functioning
Process conditions
Process procedure e-beam resist
Process procedure photoresists
Produktentwicklungen
Protective coating as spray resist for the smoothing of surfaces
Protective coating for KOH-etching
Protective coating to prevent mechanical damage
Proximity effect
Raster and vector scan principle
Ratio resolution and dose, exemplarily shown for e-beam resist SX AR-N 7530/1
Ready-to-use spray resists with EVG devices (positive and negative)
Removers in general
Resist for 488 nm exposure wavelength
Resist for near infrared (NIR)
Resist of the month April 2013: Positive e-beam resist CSAR 62 – an alternative to ZEP 520
Resist of the month April 2015: High-sensitivity negative resist AR-N 4400-10
Resist of the month April – Thermally developable positive resist Phoenix 81
Resist of the Month Archive: April 2014
Resist of the Month Archive: October 2013
Resist of the month January 2013: Negative p hotoresists SX AR-N 4340/8 – a resist for laser interference lithography (LIL)
Resist of the month January 2015: High temperature-resistant positive resist
Resist of the month January 2016: Electra 92 has now gone into production!
Resist of the month January 2017: Optimised negative spray resist AR-N 2200
Resist of the month January: SU 8 alternative – negative photoresist Atlas 46
Resist of the month Juli 2015: Process-adapted two-layer resist AR-BR 5460
Resist of the month July 2013: Thermally stable two-layer system – SX AR-N 4340/10 – AR-P 5460
Resist of the month July 2014: Electra 92
Resist of the month July 2016: Negative PMMA resist for photolithography
Resist of the Month July: Medusa 82 – the alternative to HSQ-resists
Resist of the month October 2012: Negative photoresists AR-N 4400 – with optimized bake regime
Resist of the month October 2014: Safer solvent
Resist of the month October 2015: E-beam lithography on glass – CSAR 62 and Electra 92
Resist of the month October 2016: Optimised T-gate structures with three-layer system PMMA, copolymer 617 and CSAR 62
Resist of the month of April: Fluorescent negative photoresist Atlas 46 S
Resist of the month of October: Fluorescent resist structures with SX AR-P 672.08
Resist of the Month of October: Medusa 82 – alternative to HSQ
Resist-Wiki
Resists for novel applications in lithography – thermally structurable polymers
S3 Alliance visits Allresist
Safer solvent PMMA protective coating
SCALPEL
Scattering
Sensitive negative PMMA resist (CAR)
Sensitive negative resist for 405 nm laser direct exposure
Sensitive, etch-stable negative e-beam resist for processes without yellow light
Solution
Solvent removers
Solvents and workplace safety
Solvents in e-beam resists
South Korea – SEMCRON
Spray resists for different topologies (negative)
Spray resists for different topologies (positive and negative)
Stabilisation/ hardening of resist films
Stopper
Storage and ageing
Strategy workshop – we will not be available for you on January 13th, 2023!
Strategy workshop: we will not be available for you on January 30, 2024!
Structuring by ablation of the resist materials
Structuring of polyphthalaldehydes with photolithography
Surface imaging resist system SX AR-N 7100 – silylable photoresist
SX AR-PC 5060 F-Protect (replacement for Cytop)
T-gates with three-layer system CSAR/PMMAcoMA/PMMA
Taiwan – Techpoint Taiwan Corp.
Temperature resistance of e-beam polymers
Temperature-stable negative resist
Thermally stable two-layer lift-off systems
Thermostable photoresists
Thick CSAR 62
Thinner
Three-layer system CSAR/PMMAcoMA/PMMA
Top surface imaging (TSI) photoresist – principles
Top Surface Imaging E-Beamresist
Two-layer e-beam resist system with novolacs as bottom resist
Two-layer photoresist system for water-sensitive substrates
Two-layer PMMA e-beam resist system for high-resolution lift-off
Two-layer resist system for hydrofluoric acid etching
Types of developers
