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1. What are e-beam resists composed of, and how do they work?
1. What are photoresists composed of, and how do they work?
10. How high is the etch resistance of e-beam resists in the presence of strong acids?
10. Which developers are optimal for photoresist, and how do factors like developer concentration and temperature influence the result?
11. How can resist coatings be removed again?
11. How high is the solvent resistance of e-beam resist films?
12. What is the application range of protective coatings?
13. How do image reversal resists work?
14. How can undercut patterns (lift-off structures) be produced in one- or two layer systems?
15. How can thick films of > 10 µm be processed in an optimal way?
16. Which resolution and which contrast can be obtained with photoresists?
17. How high is the plasma etch resistance of photoresists?
18. How high is the etch resistance of photoresist in the presence of strong acids?
19. Which photoresists are suitable for hydrofluoric acid (HF) etching?
2. For how long are e-beam resists stable, and what are the optimal storage conditions?
2. For how long are photoresists stable, and what are the optimal storage conditions?
20. How high is the solvent resistance of photoresist films?
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2L-Lift-off system AR-P 617 – AR-P 8100
3. How may age-related changes influence the quality of a photoresist?
3. What is the optimal pre-treatment of substrates for e-beam resist application?
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4. How high is the adhesion strength of e-beam resists to different wafers?
4.What is the optimal pre-treatment of substrates for photoresists?
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5. How are e-beam resists exposed? How can the optimum exposure dose be determined?
5. What are the adhesion features of photoresists on different wafers?
6. What are the optimum coating parameters for photoresists in order to achieve good film images?
6. Which developers are optimal for e-beam resists, and how do factors like developer concentration and temperature influence the result?
7. How can e-beam resist films be removed again?
7. Why may air bubbles develop in photoresist films, and how can they be avoided?
8. What is the function of the softbake of photoresist films after the coating?
8. Which resolutions do e-beam resists achieve?
9. How are photo resists exposed, and how can the optimum exposure dose be determined? How long can coated and exposed substrates be stored prior to exposure?
9. How high is the plasma etch resistance of e-beam resists?
Adaptable two-layer resist AR-BR 5460 for variable lift-off structures
Additional new experimental developers for AR-P 617
Adhesion promoter HMDS and diphenylsilanediol (AR 300-80)
Adhesive strength
Adhesive strength of AR 300-80
Ageing of developer
Alkali-stable and solvent-stable negative resist
Alkali-stable positive resist obtained after treatment with HMDS
Alkali-stable, easily structurable positive resist SX AR-P 5900/8
Alkaline developers for aluminium substrates
Allresist at the EIPBN 2018 Conference in Puerto Rico
Allresist auf der MNE und Semicon
Allresist now offers many solvents in lightweight HDPE bottles
Allresist presents Medusa 82 at the MNE 2019 in Rhodes
Allresist supports Ukraine
Allresists neue Produktentwicklungen in den Startlöchern
Alternatives for NMP-based removers
Aluminium structures developed directly
April 2019: Phoenix 81
April 2021: CSAR 62 – In demand around the world
April 2022: New environmentally friendly developer for PMMA resists AR 600-57
Aqueous negative resist based on gelatine
Aqueous-alkaline removers
AR-N 7700, 4 µm thick, proximity effect
AR-P 617 Two layer lift-off system
Atlas 46 for e-beam lithography
Atlas 46 for nanoimprint lithography
ATLAS 46 in general
Basics
Black resist
Black-Protect – stable protective coating for HF and KOH etchings
Bleachable resists
BOE etching of SiO2 with CSAR 62 mask
Brandenburger Innovationsfachkräfte
Brandenburgs Wirtschaftsminister Albrecht Gerber bei Allresist zu Besuch – Photovoltaikanlage verbessert Ökobilanz 2015
CAR 44 for e-beam lithography
CAR 44 on copper
Chemical dry etching
Chemically amplified, highly sensitive negative e-beam resist SX AR-N 7730/37
Chemically enhanced negative resist (Process parameters and resolution)
Chemically enhanced negative resist without cross-linking
Collapse of extreme high-resolution e-beam resist structures
Coloured negative photoresists
Composition of photoresists
Conductivity under the application conditions of e-beam lithography
Cross linker
CSAR 62 Avoidance of particles during large-area exposures
CSAR 62 for EUV applications
CSAR 62 for thick films
CSAR 62 lift-off for thick layers
CSAR 62 nanostructures written at 100 kV
CSAR 62 single layer lift-off system
CSAR 62 thick layers
CSAR 62 – Development at low temperatures
CSAR 62 – Experimental studies on new, sensitive developers
CSAR 62 – Mechanism of action
CSAR structures on glass
Customer information Corona virus
Determining the conductivity of Electra 92 layers on glass
Developer AR 300-35 for alkali-sensitive substrates
Developer for CSAR 62 (AR-P 6200)
Development cascade
Development of thick negative resist layer
Development procedures
Diffractive optics with the “analogous“ e-beam resist
Dilution of resists
Dose-dependent structure size with negative resists
E-Beam Resist
E-beam resist: Procedures
E-beam resists: General
Einweihung des neuen 450 m² großen Anbaues zum 26. Firmenjubiläum
Electra 92 variant optimised for applications on novolac-based resists
Electron beam lithography systems
Electron beam resists
Ethanol and toluene-resistant photoresist AR-U 4060
Eurostar-Projekt: PPA-Litho
Eurostar-Projekt: PPA-Litho
Evaluation of various developers for e-beam exposed CSAR 62 layers (100 kV)
Evaluation of various developers for e-beam exposed CSAR 62 layers (100 kV)
Exposure
Extension of the production facilities
Fabrication of vertical flanks with CAR 44
Fachartikel im Magazin für Oberflächentechnik
Fachartikel in der Nanotechnologie (CSAR 62)
Fachartikel in der Nanotechnologie (Electra 92)
Fluorescent resist structures
Fluorescent resist structures with photoresists
Forays through the lithography of microelectronics (Matthias Schirmer)
Förderung unternehmensWert:Mensch
Forschungsprojekte
General: Resist composition
Generation of secondary electrons
Generation of undercut structures with negative resists
Great success with Medusa 82 at the MNE
HF etching of GaAs with CSAR 62 masks
High resolution on quartz with Electra 92 on HSQ resists
High-resolution negative e-beam resist
High-resolution negative e-beam resist AR-N 7520.17new for etching application
High-resolution PMMA one layer resist
Highly sensitive e-beam resist AR-P 617 (PMMA-copolymer)
Improved protective coating SX AR-PC 5000/31
Innovative new development at the MNE 2017
Interference lithography
January 2020: Black resist SX AR-N 8355/7
January 2021: Optimised process for negative photoresist Atlas 46
January 2022: Versatile Phoenix 81 (AR-P 8100)
July 2020: Bottom resist AR-BR 5400, the “workhorse” for two-layer processes
July 2021: CAR 44 for galvanic molding
Laser ablation of PPA (Phoenix 81)
Laser direct exposure with AR-P 3540
Lift off (one layer – two layer)
Loading
Long-term stability of Electra 92
Manufacture of plasmonic nanostructures with CSAR 62
Manufacture of undercut structures for T-gates in three-layer processes
Medusa 82 for EUV applications
Medusa 82 with photoacid generator (PAG)
Medusa 82 – the alternative to HSQ-resists, storage stability
Medusa 82: Influence of post exposure bake (PEB)
Negative CAR PMMA resist SX AR-N 4810/1
Negative poly(hydroxystyrene) and (hydroxystyrene-co-MMA) photoresist with high-temperature stability
Negative polyimide photoresist
Negative two- layer lift-off system
New AR 300-80 and contact angle measurement
New developer for AR-P 5320
New developers for AR-P 617
New developers for PMMAcoMA (AR-P 617, 50 kV)
New procedure for the spray coating of deep topologies with SX AR-P 1250/20
New safer solvent remover AR 300-76
New solvent remover
NIR-laser structurable photoresists