Our research team successfully developed a negative resist with high resolution and plasma etching stability in oxygen. Already with the first samples, it was possible to achieve the properties of HSQ.
For this purpose, aptitude tests were carried out at Raith GmbH. The area dose was approx. 1250 μC/cm² (30 kV); the resolution of single lines about 11 nm (Fig. 1). Development was performed in aqueous-alkaline manner in a strong TMAH solution. Even higher resolutions are possible if specially adapted developers are used.
High resolution test with Medusa 82 (SX AR-N 8200.03/1), Raith GmbH
Further tests revealed improved process stability as compared to HSQ and also higher storage stability.
The research work on Medusa 82 will be continued as part of our scientific project. All results will be presented at the MNE 2018 (Copenhagen 24th – 27th September) at our stand and in a lecture.