A new application field for Atlas 46 is electron beam lithography, as experiments with a thin Atlas resist layer patterned by e-beam lithography demonstrated. At a layer thickness of 450 nm, 200 nm lines were written into this layer. The sensitivity was 70 μC/cm² at an acceleration voltage of 100 kV. The solvent-based development was carried out with AR 300-12, followed by a short post treatment with acetone.
200 nm lines generated with Atlas resist
Atlas 46 is thus also suitable for a use as electron beam resist.