The e-beam resist CSAR 62 has so far been offered in three standard versions:
AR-P 6200.04 (80 nm / 4000 rpm),
AR-P 6200.09 (200 nm / 4000 rpm), and
AR-P 6200.13 (400 nm / 4000 rpm).
Intense plasma etchings for the generation of deep etch structures however require significantly thicker resist layers and place special demands on resolution and contrast. With AR-P 6200.13, 800 nm thick layers are obtained at a spin speed of 1000 rpm. As studies conducted at Martin Luther University in Halle demonstrate, can trenches with a width of <100 nm be realised with a period of 300 nm. The high contrast is made possible by using our developer AR 600-546.
For even higher layer thicknesses of up to 1.5 µm, now a special variant of CSAR 62 was put on the market which can also be developed with high contrast in AR 600-546: resist AR-P 6200.18 (1.5 µm / 1000 rpm).