A few applications like e.g. the manufacture of deep etched structures by plasma etching require a processing of thick resist layers. Of major importance in this case is a high sensitivity, especially in electron beam lithography. With the highly sensitive resist CSAR 62, film thicknesses up to 800 nm (AR-P 6200.13) or even up to 1.5 μm (experimental sample SX AR-P6200/10) can be produced. Even thicker films of more than 2 micrometer can be generated by multiple coatings.
Fig. 1 AR-P 6200.13: 100 nm-trenches, height of the film 830 nm
Suitable as developer is AR 600-546. By varying the applied dose, the undercut can be specifically adjusted and provides structures from almost vertical edges up to pronounced lift-off architectures.
Dose: 1200 pC/cm 1440 pC/cm 1728 pC/cm
Fabrication of trenches at the MLU (single pixel lines, 30 keV, film thickness 830 nm, period 300 nm, dosage series, developer AR 600-546, 60 s, stopper IPA)
Overview E-beam positive